Details

Type

Text

Title

Frohman, Dov oral history

Contributor

Frohman-Bentchkowsky, Dov, Interviewee

Katz, Jeff, Interviewer; Editor

Publisher

Computer History Museum

Date

2009-05-02

Place of Publication

Mountain View, Calif.

Extent

19 p.

Description

Dov Frohman, PhD, is an Israeli engineer and business executive who invented the EPROM while he was an engineer at Intel Corporation. Born in Amsterdam, he migrated first to Israel (1949) and then to the United States to get his Master's Degree and PhD at the University of California at Berkeley. Prior to Intel, Frohman worked at Fairchild Semiconductor in their R&D laboratory. In the very early 1970's he lived and taught at the University of Science and Technology in Kumasi, Ghana.

Dr. Frohman then returned to Intel where he convinced the company's leadership team (Moore, Noyce and Grove) to open first a design center and then a wafer fab in Israel. He was the first General Manager of Intel Israel and is widely credited with playing a very key role in the development of Israel's thriving technology industry.

Category

Transcription

Subject

semiconductor history; Frohman, Dov; Intel Israel; Fairchild Semiconductor; Intel Corporation; The Technion; University of California, Berkeley; FitzGerald, Desmond (Des); Frohman, Dov [-Bentchkowsky]; Graham, Robert (Bob); Grove, Andy; Innes, Tom; Kahng, D.; Moore, Gordon; Noyce, Robert (Bob); Seeds, Robert (Bob); Sze, S.M.; Vadasz, Les; erasable programmable read-only memory; EPROM; FAMOS; floating gates; metal nitride oxide semiconductors; MNOS; metal oxide semiconductors; MOS; oxide; semiconductor memories; RAM; ROM; bipolar; non-volatile

Collection Title

Oral Histories Online

Accession Number

102702214