Artifact Details

Description

This volume describes experiments on the breakdown of silicon oxide (pp. 1- 6); study of weak-spots in MOS capacitors (pp. 7-15); feasibility of cold cathode structure (p. 43); and an idea for an MNOS Random Access or Read Mostly Memory (pp. 71-75).

Date

1967-10-05-1970-12-18

Author

Lenzlinger, Martin

Biographical Notes

Martin Lenzlinger joined Fairchild circa 1967. A 1968 organization chart indicates that he was a Member of Technical Staff reporting to E. Snow in the Surface Physics section of Physics Department.

Publisher

Fairchild Semiconductor

Identifying Numbers

Document number

764

Extent

Approximately 28 dated entries over 75 pages.

Dimensions

12 x 10 inches

Patents

The author is named as inventor on 1 U.S patent. It is assigned to Fairchild:

U.S. patent 3648127, “Reach through or punch-through for gate protection in MOS devices.” Filed 1970-09-28. Issued 1972.

Category

Notebooks

Collection Title

Fairchild Semiconductor notebooks and technical papers

Publications

The author contributed to the following R&D Technical Reports (TR) and papers in professional publications during his service at Fairchild:

TR360 Fowler-Nordheim tunneling into thermally grown SiO2 (1968-09-09).

TR387 Charge transport and storage in metal nitride-oxide-silicon (MNOS) structures (1969-02-12).

TR406 Hall effect in silicon-chromium films (1969-05-16).

TR456 Gate protection of MIS devices (1970-01-26).

TR496 Charge transfer in charge coupled devices (1971-02-22).

Bentchkowsky, D.F. and Lenzlinger, M. Charge transport and storage in metal-nitride-oxide-silicon (MNOS) structures. Journal of Applied Physics, vol. 40, iss. 8 (1969): 3307-3319.

Kim, C. and Lenzlinger, M. Charge transfer in charge-coupled devices. Journal of Applied Physics, vol. 42, iss. 9 (1971): 3586-3594.

*Lenzlinger, M. Gate protection of MIS devices. IEEE Transactions on Electron Devices, vol. 18, iss. 4 (1971): 249-257.

*Lenzlinger, M. and Keefe, G.O. Hall effect in silicon-chromium films. Journal of Applied Physics, vol. 40, iss. 12 (1969): 4913-4919.

*Lenzlinger, M., Keefe, G.O. and Waits, R.K. Hall effect in silicon–chromium films. Journal of Vacuum Science and Technology. vol. 6, iss. 4 (1969): 701.

Lenzlinger, M. and Snow, E.H. Fowler-Nordheim tunneling into thermally grown SiO2. Journal of Applied Physics, vol. 40, iss. 1 (1969): 278-283.

*He was lead author on these papers. Reprints are included in a three volume, bound set of “Fairchild Research Published Technical Papers” edited by Bruce Deal in 1988. Copy in the CHM collection

Credit

Gift of Texas Instruments Incorporated

Lot Number

X6464.2012