Title
Frohman patent notebook (#439)Catalog Number
102723943Type
DocumentDescription
Circuit schematics for analysis of MOS device performance under capacitive loads for TR299, below. An idea for a 4-terminal MOS transistor. An invention note for “An integrated MNOS memory” issued as U.S. patent 3641512, below (p. 9).Date
1966-03-07-1969-02-25Author
Frohman-Bentchkowsky, DovBiographical Notes
Dov Frohman-Bentchkowsky was born to Polish Jewish refugees in Amsterdam, Holland, in 1939. He was raised in hiding during the war and emigrated to Israel in 1949. He received a B.Sc. degree in electrical engineering in 1963 from the Israeli Institute of Technology, Haifa, and an M.S. and Ph.D. from University of California, Berkeley. Frohman joined the Fairchild Semiconductor, R&D Laboratory, located in Palo Alto in 1965. A 1966 organization chart lists him as an Engineer B reporting to R. Fogelsong, head of the Circuits and Development Technology Section of the Digital Integrated Electronics Department, led by R. Seeds. In 1968 he reported to L. Vadasz in a new MOS Circuit and Device Technology Dept. He joined Intel Corporation in 1969 where he developed Intel’s first EPROM in 1970. He returned to Israel in 1974 where he established a design center and taught at Hebrew University. In 1985 Frohman was appointed general manger of Intel Israel and remained until his retirement in 2001.Publisher
Fairchild SemiconductorIdentifying Numbers
| Document number | 439 |
Extent
4 dated entries over 11 pages.Dimensions
12 x 10 inchesPatents
The author is named as inventor on 7 U.S patents, including 1 patent assigned to Fairchild:U.S. patent 3641512, “Integrated MNOS memory organization.” Filed 1970-04-06. Issued 1972-12-30.
Category
NotebooksCollection Title
Fairchild Semiconductor notebooks and technical papersPublications
The author contributed to the following R&D Technical Reports (TR) and papers in professional publications during his service at Fairchild:TR 299 MOS device characterization (1967-05-31).
TR 359 Computer aided design and characterization of digital MOS integrated circuits (1968-10-11).
TR387 Charge transport and storage in metal nitride-oxide-silicon (MNOS) structures (1969-02-12).
TR 410 Integration of metal-nitride-oxide semiconductor (MNOS) transistors for nonvolatile storage arrays (1969-04-16).
TR 430 The metal-nitride-oxide-silicon (MNOS) transistor characteristics and applications (1969-11-24).
TR 449 The Si3N4-SiO2 interface charge in MNOS structures (1969-12-19).
Frohman-Bentchkowsky, D. and Grove, A. S., Conductance of MOS transistors in saturation. IEEE Transactions on Electron Devices, vol. 15, iss. 6 (1968): 411.
Frohman-Bentchkowsky, D., The metal-nitride-oxide-silicon (MNOS) transistor—Characteristics and applications. Proceedings of the IEEE, vol. 58, iss. 8 (1970): 1207-1219.
Frohman-Bentchkowsky, D. and Vadasz, L., DC analysis of an MOS source follower. IEEE Journal of Solid-State Circuits, vol. 3, iss. 3 (1968): 306-307.
Frohman-Bentchkowsky, D. and Forsythe, D. D., Reliability of MNOS integrated circuits. 1969 International Electron Devices Meeting, vol. 15 (1969): 48.
Frohman-Bentchkowsky, D., On the effect of mobility variation on MOS device characteristics. Proceedings of the IEEE, vol. 56, iss. 2, (1968) 217-218.
Frohman-Bentchkowsky, D., An integrated metal-nitride-oxide-silicon (MNOS) memory. Proceedings of the IEEE, vol. 57, iss. 6 (1969): 1190-1192.
Frohman-Bentchkowsky, D. and Vadasz, L., Computer-aided design and characterization of MOS integrated circuits. 1968 IEEE International Solid-State Circuits Conference: Digest of Technical Papers, vol. XI (1968): 68-69.
Klein, T., Kauffman, W. L., Hurlston, R. E., Jones, B. L. and Frohman, D., Manufacturing methods for integrated circuits using MOS transistors. The Defense Technical Information Center (1969-01): Accession number: AD0850892.