Artifact Details

Description

Documentation of research into the electrical performance characteristics of experimental bipolar and MOS transistor and integrated circuit structures under various operating and stress conditions. Several new and improved device types are proposed. Several entries address issues of contamination, surface states, and device stability. These were major problems that limited the commercial exploitation of the small device size and low manufacturing cost advantages promised by MOS technology. Key entries include: Double ring structure - basis for U.S. patent 3463977 (p. 1); Breakdown phenomena involving field induced junction – work that led to TR236, below, (p. 14); Reduction of Surface State Density - based on discussions with B. E. Deal and E. H. Snow (p. 31) and hfe stability entry (p. 34) contributed work for U.S. patent 3513035 and TR261, below, and that in turn provided the basis for the paper “Characteristics of the surface-state charge (QSS) of thermally oxidized silicon,” the fifth most frequently cited paper in the history of the Electrochemical Society.

Note: Work used in Grove’s important first paper (TR114 below) was performed prior to the period covered by this volume, this is likely the second notebook issued to Grove.

Date

1965-01-18-1968-05-21

Author

Grove, Andrew S.

Biographical Notes

András István Gróf was born in Budapest, Hungary in 1936. He escaped during the Hungarian Revolution and arrived in the United States in 1957 where he earned a B.S. degree from the City College of New York and Ph.D. in Chemical Engineering from the University of California, Berkeley in 1963. As Andrew Stephen Grove, he joined the Fairchild Semiconductor R&D Laboratory in 1963. In 1966 he was head of the Surfaces-Device Theory section reporting to C. Bittmann. This section, that included B. Deal, E. Snow, R. Whittier and M. Sklar, resolved many of the fundamental technological issues associated with stable, commercial MOS devices. Shortly before he joined Intel Corporation as Director of Engineering in 1968, he was Assistant Director of the R & D labs reporting to G. Moore. At Intel he rose to president in 1979, CEO in 1987, and chairman of the board in 1998. Under Grove's leadership, Intel grew into the largest and most recognized semiconductor company in the world. He has written more than 40 technical papers and several books, holds several patents in semiconductor devices and technology, and has taught at the University of California, Berkeley and the Stanford University Graduate School of Business.

Publisher

Fairchild Semiconductor

Identifying Numbers

Document number

413

Extent

Approximately 18 dated entries over 48 pages.

Dimensions

12 x 10 inches

Patents

The author is named as inventor on 2 U.S. patents; both patents are assigned to Fairchild:

U.S. patent 3463977, “Optimized double ring semiconductor device.” Filed 1966-04-21. Issued 1969-08-26.

U.S. patent 3513035, “Semiconductor device process for reducing surface recombination velocity.” Filed 1967-11-01. Issued 1970-05-19

Category

Notebooks

Collection Title

Fairchild Semiconductor notebooks and technical papers

Publications

The author contributed to the following R&D Technical Reports (TR) and conference papers during his service at Fairchild. Much of this work provided the foundation of his seminal college text book Physics and Technology of Semiconductor Devices published by Wiley in 1967.

TR 114 Theoretical calculation of the capacity-voltage relationship of metal-oxide-semiconductor capacitors (1963-12-24).
TR 148 Notes on the silicon-dioxide literature (1963-12-24).
TR 155 Diffusion of gallium through a silicon dioxide layer (1964-02-14).
TR 166 Redistribution of acceptor and donor impurities during thermal oxidation of silicon (1964-03-25).
TR 177 Investigation of thermally oxidized silicon surfaces using metal-oxide-semiconductor structures (1964-05-25).
TR 184 Electron and hole mobilities in inversion layers on thermally oxidized silicon surfaces (1964-11-17).
TR 189 Impurity distribution in epitaxial growth (1964-09-29).
TR 190 Ion transport phenomena in insulating films (1964-10-15).
TR 207 General relationship for the thermal oxidation of silicon (1965-04-12).
TR 232 Radiation damage in MOS capacitors (1965-02-11).
TR 236 Breakdown voltage of planar silicon diodes (1965-12-10).
TR 242 Surface effects on p-n junctions (1966-01-13).
TR 244 Properties of the silicon-dioxide-silicon system (1966-02-16).
TR 246 MOS characteristics for gallium arsenide (1966-04-07).
TR 257 Effect of surface fields on the breakdown voltage of planar silicon p-n junctions (1966-07-22).
TR 260 Temperature dependence of the MOS transistor characteristics below saturation (1966-08-05).
TR 261 Characteristics of the surface-state charge of thermally oxidized silicon (1966-08-11).
TR 279 Reduction of surface recombination velocity in an n-p-n transistor (1966-12-23).
TR 282 Effects of ionizing radiation on oxidized silicon surfaces and planar devices (1967-01-24).
TR 296 Surface recombination in semiconductors (1967-04-25).
TR 383 Introduction to noise in semiconductor devices (1969-01-10).

Deal, B. E., Sklar, M., Grove, A. S., and Snow, E. H.Characteristics of the surface-state charge (QSS) of thermally oxidized silicon. Journal of the Electrochemical Society, vol. 114, iss. 3 (1967): 266-274.

Deal, B. E. and Grove, A. S. General relationship for the thermal oxidation of silicon. Journal of Applied Physics, vol. 36, iss. 12 (1965): 3770-3778

Fitzgerald, D. J. and Grove, A. S. Mechanisms of channel current formation in silicon p-n junctions. 1965 Fourth Annual Symposium on the Physics of Failure in Electronics, (1965): 315-332.

Fitzgerald, D.J. and Grove, A.S. Surface recombination in semiconductors. 1967 International Electron Devices Meeting, vol. 13 (1967): 102-104.

Fitzgerald, D.J. and Grove, A.S. Surface recombination in semiconductors. IEEE Transactions on Electron Devices, vol. 15, iss. 6 (1968): 426-427.

Frohman-Bentchkowsky, D. and Grove, A.S. Conductance of MOS transistors in saturation. 1967 International Electron Devices Meeting, vol. 13 (1967): 22-24.

Frohman-Bentchkowsky and D.; Grove, A.S. Conductance of MOS transistors in saturation. IEEE Transactions on Electron Devices, vol. 16, iss. 1 (1969): 108 - 113
Cited by: 1

Grove, A. S. Surface effects on p-n junctions. 1967 Sixth Annual Reliability Physics Symposium (1967): 46.

Grove, A.S. and Fitzgerald, D.J. Characteristics of surface space-charge regions under non-equilibrium conditions. IEEE Transactions on Electron Devices, vol. 13, iss. 8/9 (1966): 674.

Grove, A.S. and Fitzgerald, D.J. The origin of channel currents associated with P+ regions in silicon. IEEE Transactions on Electron Devices, vol. 12, iss. 12 (1965): 619-626.

Grove, A.S. and Fitzgerald, D.J. Surface effects on silicon p-n junctions: the origin of anomalous channel currents. IEEE Transactions on Electron Devices, vol. 12, iss. 9 (1965): 508-509.

Grove, A.S., Leistiko, O. Jr. and Hooper, W.W. Effect of surface fields on the breakdown voltage of planar silicon p-n junctions, IEEE Transactions on Electron Devices, vol. 14, iss. 3 (1967): 157-162.

Grove, A. S., Leistiko, O. and Sah, C. T. Redistribution of acceptor and donor impurities during thermal oxidation of silicon. Journal of Applied Physics, vol. 35, iss. 9 (1964): 2695-2701.

Grove, A. S., Roder, A. and Sah, C. T. Impurity distribution in epitaxial growth. Journal of Applied Physics, vol. 36, iss. 3 (1965): 802-810.

Grove, A.S. and Snow, E.H. A model for radiation damage in metal-oxide-semiconductor structures. Proceedings of the IEEE, vol. 54, iss. 6 (1966): 894-895.

Grove, A. S., Snow, E. H., Deal, B. E. and Sah, C. T. Simple physical model for the space charge capacitance of metal-oxide semiconductor structures. Journal of Applied Physics, vol. 35, iss. 8 (1964): 2458-2460.

Hsu, S. T., Fitzgerald, D. J. and Grove, A. S. Surface-state related l/f noise in p-n junctions and MOS transistors. Applied Physics Letters, vol. 12, iss. 9 (1968): 287-289.

Leistiko, O., Jr., Grove, A.S. and Sah, C.T. Electron and hole mobilities in inversion layers on thermally oxidized silicon surfaces. IEEE Transactions on Electron Devices, vol. 12, iss. 5 (1965): 248-254.

Snow, E.H., Grove, A.S. and Fitzgerald, D.J. Creation of fast surface states by ionizing radiation. IEEE Transactions on Electron Devices, vol. 14, iss. 9 (1967): 630

Frohman-Bentchkowsky, D. and Grove, A.S. Conductance of MOS transistors in saturation. IEEE Transactions on Electron Devices, vol. 15, iss. 6 (1968): 411.

Snow, E.H., Grove, A.S. and Fitzgerald, D.J. Effects of ionizing radiation on oxidized silicon surfaces and planar devices. Proceedings of the IEEE, vol. 55 , iss. 7 (1967): 1168-1185.

Snow, E. H., Grove, A. S., Deal, B. E. and Sah, C. T. Ion transport phenomena in insulating films, Journal of Applied Physics, vol. 36, iss. 5 (1965): 1664-1673

Vadasz, L.; and Grove, A.S. Temperature dependence of MOS transistor characteristics below saturation, IEEE Transactions on Electron Devices, vol. 13, iss. 12 (1966): 863-866.

Credit

Gift of Texas Instruments Incorporated

Lot Number

X6464.2012