TitleCastro patent notebook (#576)
AuthorCastro, P. (Pat) L.
Biographical NotesP. (Pat) L. Castro worked at Fairchild from circa 1966 to 1973. A 1968 organization chart shows her in the Contact Technology section of the Materials and Processes Department reporting to I. Blech. Most of the work described in these volumes and the resulting publications was performed under the supervision of B. Deal who at that time was Section head of Dielectric Films. From 1972-11 until her resignation in 1973-05, Castro documented to work of an R&D team working together with Mountain View production personnel in transferring a Philips CMOS process to Fairchild.
ExtentApproximately 27 dated entries over 152 pages.
Dimensions12 x 10 inches
DescriptionThis volume contains descriptions of investigations into surface states on silicon and the effects of processing variations. It includes numerous hand-plotted graphs and tables of experimental results. Entries include: investigation of strain in aluminum films reported in TR371 (pp. 4-9); phosphorus gettering and hydrogen anneal processing (pp. 18-33); pre-alloy drift (pp. 41-54); effects on fast surface states (pp. 63-88); surface preparation effects (pp.119-152).
Collection TitleFairchild Semiconductor notebooks and technical papers
PublicationsThe author contributed to the following R&D Technical Reports (TR) and papers in professional publications during his service at Fairchild:
TR 304 Process effects on fast surface states of thermally oxidized silicon I. annealing at temperatures of 920°C or below (1967-08-31).
TR306 Electrical properties of vapor deposited silicon nitride and silicon oxide films on silicon (1967-09-05).
TR331 Preliminary investigation of nickel gettering (196-02-06).
TR371 Stresses in thin films of aluminum (1968-11-08).
TR378 Characteristics of fast surface states associated with Si02 and Si3N4-Si02-Si
TR410 Some observations regarding the relationship between bulk dislocation and
gettering in silicon (1969-06-11).
TR476 Low temperature reduction of fast surface states associated with thermally oxidized silicon (1970-06-22).
*Castro, P.L. and Deal, B.E. Low temperature reduction of fast surface states associated with thermally oxidized silicon. Journal of the Electrochemical Society, vol. 118, iss. 2 (1971): 280-286.
Deal, B.E., Fleming, P.J., and Castro, P.L. Electrical properties of vapor deposited silicon nitride and silicon oxide films on silicon. Journal of the Electrochemical Society, vol. 115, iss. 3 (1968): 300-307.
Deal, B.E., MaKenna, E., and Castro, P.L. Characteristics of fast surface states associated with SiO2-Si and Si3N4-SiO2-Si structures. Journal of the Electrochemical Society, vol. 116 (1969): 997-1005.
* This paper is included in a three volume bound set of “Fairchild Research Published Technical Papers” assembled by Bruce Deal in 1988 (copy in the CHM Fairchild collection).