TitleHilbiber patent notebook (#36)
AuthorHilbiber, David F.
Biographical NotesDavid F. Hilbiber received a B.S.E.E. from Seattle University and an M.S.E.E. from San Jose State University. He worked at Lockheed Aircraft before joining Fairchild circa 1959 where he developed analog devices and applications under Heinz Reugg, Section Head of the Linear IC Group. In a 1964 paper "A new semiconductor voltage standard," Hilbiber described the concept of the band gap reference, a key element in the design of IC voltage regulators. He also designed the Fairchild C-V meter, an important tool used by Deal, Grove, et. al., in the company’s evaluation of MOS stability phenomena. He joined HP Associates circa 1966 and left in 1968 to found Qualidyne Semiconductor. He taught electronics technology at Centralia College, located in Centralia, Washington.
ExtentApproximately 52 dated entries over 152 pages.
Dimensions12 x 10 inches
DescriptionDescribes testing performed on a variety of transistor types in amplifying, switching and core driving circuits. As with the Haas book of this period, there is significant investigation of the use of PNPN and PNΠN [pn(pi)n] devices, including the XT5500, as storage elements. Draft copy of a paper “A new semiconductor memory element with non-destructive readout and electrostatic storage” read at WESCON 1960 (p. 21). Experiments with bipolar FETs (Field Effect Transistors) and C.T. Sah’s “surface controlled transistor” SCT – an early a four terminal MOS transistor-and specialized devices for use as choppers, temperature sensors, strain gauge elements, and pressure transducers are documented. A “ramp type” A to D converter transistor circuit (p. 88) and later modifications, see TR51, are described.
PatentsThe author is named as inventor on 11 U.S patents, including 8 patents assigned to Fairchild:
U.S. patent 3427513, “Lateral transistor with improved injection efficiency.” Filed 1966-03-07. Issued 1969-02-11.
U.S. patent 3405330, “Remote-cutoff field effect transistor.” Filed 1965-11-10. Issued 1968-10-08.
U.S. patent 3366802, “Field effect transistor photosensitive modulator.” Filed 1965-04-06. Issued 1968-01-30).
U.S. patent 3308271, “Constant temperature environment for semiconductor circuit elements.” Filed 1964-06-08. Issued 1967-03-07.
U.S. patent 3317850, “Temperature-stable differential amplifier using field-effect devices.” Filed 1963-04-29. Issued 1967-05-02.
U.S. patent 3271660, “Reference voltage source.” Filed 1963-03-28. Issued 1966-09-06.
U.S. patent 3262064, “Temperature-stable differential amplifier.” Filed 1962-12-03. Issued 1966-07-19.
U.S. patent 3244949, “Voltage regulator.” Filed 1962-03-16 Issued 1966-09-06.
Collection TitleFairchild Semiconductor notebooks and technical papers
PublicationsThe author contributed to the following R&D Technical Reports (TR) and papers in professional publications during his service at Fairchild:
TR44 The magnitude and effect of thermoelectric voltages in semiconductor devices (1961-05-05).
TR51 A ramp-type, voltage-to-time conversion system (1961-08-31).
TR55 A high output impedance, temperature-compensated, precision current source (1961-09-05).
TR64 The reduction of zero-shift in transistorized differential amplifiers arising from temperature excursions (1961-02-09).
TR75 An electronic package for the 3S-G transducer (1962-06-22).
TR77 On the generation of stable reference voltages (1962-07-06).
TR95 Further notes on differential amplifier compensation (1962-12-23).
TR187 A simulation of the low frequency distributed transistor model (1964-08-28).
TR226 An improved lateral geometry p-n-p transistor (1965-09-01).
Daughters, G., II and Hilbiber, D., A new semiconductor light-actuated chopper. 1965 IEEE International Solid-State Circuits Conference: Digest of Technical Papers, vol. VIII (1965): 62-63.
Hilbiber, D. F., A high-performance lateral geometry transistor for complementary integrated circuits. IEEE Transactions on Electron Devices, vol. 14, iss. 7 (1967): 381-385.
Hilbiber, D., A new DC differential transistor amplifier. IRE Transactions on Circuit Theory, vol. 8, iss. 4 (1961): 434-439.
Hilbiber, D., A new semiconductor voltage standard. 1964 IEEE International Solid-State Circuits Conference: Digest of Technical Papers, vol. VII (1964): 32-33.
Hilbiber, D. and Grinich, V., A new semiconductor memory element with non-destructive readout and electrostatic storage. Wescon (1960).
Hilbiber, D. and Leistiko, D., Jr., A high-performance universal operational amplifier. 1963 IEEE International Solid-State Circuits Conference: Digest of Technical Papers, vol. VI (1963): 40-41.
Hilbiber, D. F. and Lucas, R. C., Nondestructive determination of MOSFET gate breakdown voltage. IEEE Transactions on Electron Devices, vol. 14, iss. 7 (1967): 402-403.
Leistiko, O. and Hilbiber, D., The FET tetrode: a high-performance, small-signal amplifier. 1964 International Electron Devices Meeting, vol. 10 (1964): 60.