Explore Collections Search the Collection Fellow Awards Core Magazine Special Projects

Details

Catalog Number

102722973

Title

Hsu patent notebook (#594)

Type

Text

Date

1966-09-10-1966-12-05

Author

Hsu, Sheng-Feng

Biographical Notes

Sheng-Fen Hsu worked at Fairchild from circa 1966 to circa 1970 where he specialized in the investigation of noise phenomena in silicon devices. During his Fairchild career he published a minimum of 6 internal R&D Technical Reports (TR) and 5 technical papers in professional journals. Note: the author is identified as S. T. Feng on all published papers.

Publisher

Fairchild Semiconductor

Identifying Numbers

Document number 594

Extent

Three dated entries over 4 pages.

Dimensions

12 x 10 inches

Description

This volume contains “Preamplifier and test jig for noise measurements” (p. 1); “Noise recorder” (p. 2); “Equivalent circuit treatment of MOS capacitance” (p. 3); and "Drift VI and Noise” (p. 4).

Category

Notebooks

Collection Title

Fairchild Semiconductor notebooks and technical papers

Publications

The author contributed to the following R&D Technical Reports (TR) and professional papers during his service at Fairchild:

TR301 Surface effects on low frequency noise: initial experimental results (1967-07-31).

TR374 Characteristics of burst noise of silicon devices (1968-11-21).

TR418 Surface state related l/f noise in p-n junctions (1969-7-31).

TR437 Physical model for burst noise in semiconductor devices (1969-11-10).

TR450 Low-frequency excess noise in metal-silicon Schottky barrier diodes (1969-12-17).

TR462 Surface state related l/f noise in MOS transistors (1970-05-21).

* Hsu, S.T. Low-frequency excess in metal-silicon Schottky barrier diodes (1970). IEEE Transactions on Electron Devices, vol. 17, iss. 7 (1970-07): 496-506.

* Hsu, S.T. Surface state related l/f noise in MOS transistors. Solid-State Electronics, vol. 13 (1970): 1451-1459.

Hsu, S.T. and Whittier, R.J. Characteristics of burst (popcorn) noise in transistors and operational amplifiers. 1969 International Electron Devices Meeting, vol. 15 (1969): 86 – 88.

*Hsu, S.T. and Whittier, R.J. Characterization of burst noise in silicon devices. Solid-State Electronics, vol. 12 (1969) 867-878.

*Hsu, S. T., Fitzgerald, D. J. and Grove, A. S. Surface-state related l/f noise in p-n junctions and MOS transistors. Applied Physics Letters, vol. 12, iss. 9 (1968): 287-289.

* Hsu, S.T. and Whittier, R.J. and Mead, C.A. Physical model for burst noise in semiconductor devices. Solid-State Electronics, vol. 13, iss. 7 (1970): 1055-1056.

* This paper is included in a three volume bound set of “Fairchild Research Published Technical Papers” assembled by Bruce Deal in 1988 (copy in the CHM Fairchild collection).

Credit

Gift of Texas Instruments Incorporated

Lot Number

X6464.2012