TitleHsu patent notebook (#594)
Biographical NotesSheng-Fen Hsu worked at Fairchild from circa 1966 to circa 1970 where he specialized in the investigation of noise phenomena in silicon devices. During his Fairchild career he published a minimum of 6 internal R&D Technical Reports (TR) and 5 technical papers in professional journals. Note: the author is identified as S. T. Feng on all published papers.
ExtentThree dated entries over 4 pages.
Dimensions12 x 10 inches
DescriptionThis volume contains “Preamplifier and test jig for noise measurements” (p. 1); “Noise recorder” (p. 2); “Equivalent circuit treatment of MOS capacitance” (p. 3); and "Drift VI and Noise” (p. 4).
Collection TitleFairchild Semiconductor notebooks and technical papers
PublicationsThe author contributed to the following R&D Technical Reports (TR) and professional papers during his service at Fairchild:
TR301 Surface effects on low frequency noise: initial experimental results (1967-07-31).
TR374 Characteristics of burst noise of silicon devices (1968-11-21).
TR418 Surface state related l/f noise in p-n junctions (1969-7-31).
TR437 Physical model for burst noise in semiconductor devices (1969-11-10).
TR450 Low-frequency excess noise in metal-silicon Schottky barrier diodes (1969-12-17).
TR462 Surface state related l/f noise in MOS transistors (1970-05-21).
* Hsu, S.T. Low-frequency excess in metal-silicon Schottky barrier diodes (1970). IEEE Transactions on Electron Devices, vol. 17, iss. 7 (1970-07): 496-506.
* Hsu, S.T. Surface state related l/f noise in MOS transistors. Solid-State Electronics, vol. 13 (1970): 1451-1459.
Hsu, S.T. and Whittier, R.J. Characteristics of burst (popcorn) noise in transistors and operational amplifiers. 1969 International Electron Devices Meeting, vol. 15 (1969): 86 – 88.
*Hsu, S.T. and Whittier, R.J. Characterization of burst noise in silicon devices. Solid-State Electronics, vol. 12 (1969) 867-878.
*Hsu, S. T., Fitzgerald, D. J. and Grove, A. S. Surface-state related l/f noise in p-n junctions and MOS transistors. Applied Physics Letters, vol. 12, iss. 9 (1968): 287-289.
* Hsu, S.T. and Whittier, R.J. and Mead, C.A. Physical model for burst noise in semiconductor devices. Solid-State Electronics, vol. 13, iss. 7 (1970): 1055-1056.
* This paper is included in a three volume bound set of “Fairchild Research Published Technical Papers” assembled by Bruce Deal in 1988 (copy in the CHM Fairchild collection).