TitleKamins patent notebook (#1322)
AuthorKamins, Theodore I.
Biographical NotesTheodore (Ted) I. Kamins received B.S., M.S. and Ph.D. degrees from the University of California, Berkeley. He joined the Research and Development Laboratory of Fairchild Semiconductor circa 1969 where he performed early work contributing to the understanding of the field of polycrystalline silicon and to device applications of epitaxial silicon. He was also involved in the transfer of the Philips CMOS process from Holland to Fairchild. Kamins moved to Hewlett-Packard 1974 where he worked in a number of materials and device-related areas, beginning with the development of UV-sensitive photodiodes. He then contributed to the emerging areas of silicon-on-insulator and rapid thermal processing. Subsequent work dealt with advanced epitaxy and device technology for the silicon-germanium, heterojunction bipolar transistor, which is currently widely used for wireless communications. He was a Principal Scientist in the Information and Quantum Systems Laboratory at Hewlett-Packard Laboratories in Palo Alto, California, where he was focusing on advanced nanostructured electronic materials and devices. Kamins has also been an acting assistant professor at the University of California, Berkeley. He has taught at Stanford University and been an adjunct professor at Santa Clara University.
ExtentApproximately 54 dated entries over 142 pages.
Dimensions12 x 10 inches
DescriptionThis volume continues the investigation of the properties and processing techniques for growing polycrystalline silicon and epitaxial thin films covered in the prior volume. The work that contributed to many of the later TR reports below is developed throughout the book. For example, page 93 describes the work behind TR555 and the 1973 paper on “Stress measurement in thin single crystal silicon films.” Research into the oxidation and etching of silicon films on a sapphire substrate is noted on page 121. From 1972-05 on, the author had access to a PC or another word processing system as all later extended text entries are typed and printed on white paper and pasted into the book.
PatentsThe author is named as inventor on 33 U.S patents, including 3 patents assigned to Fairchild:
U.S. patent 3611067, “Complementary NPN/PNP structure for monolithic integrated circuits.” Filed 1970-04-20. Issued 1971-10-05.
U.S. patent 3862852, “Method of obtaining high-quality thick films of polycrystalline silicon.” Filed 1971-05-28. Issued 1971-05-28.
U.S. patent 4087571, “Controlled temperature polycrystalline silicon nucleation.” Filed 1975-06-24. Issued 1975-06-24.
Collection TitleFairchild Semiconductor notebooks and technical papers
PublicationsThe author contributed to the following R&D Technical Reports (TR) and papers in professional publications during his service at Fairchild:
TR459 Hall mobility in chemically deposited polycrystalline silicon (1970-03-25).
TR465 Polycrystalline silicon: preliminary discussion of deposition & properties (1970-05-01).
TR 469 Hall mobility in chemically deposited polycrystalline silicon (1970-03-25).
TR475 Diffusion into polycrystalline silicon: diffusion from borovapox (1970-07-09).
TR482 Thermal oxidation of polycrystalline silicon (1970-08-31).
TR491 Deposition and properties of polycrystalline silicon for silicon-gate technology (1970-10-16).
TR500 In-process thickness monitor for polycrystalline silicon deposition (1971-02-22).
TR512 Diffusion of impurities into polycrystalline silicon (1971-05-24).
TR536 p-n junctions in po1ycrystalline silicon films (1972-01-20).
TR547 Structure of chemically deposited polycrystalline silicon films (1972-10-04).
TR555 Stress measurement in thin single crystal silicon films (1973-05-18).
TR556 Diffusion in thin silicon films formed by electrochemical etching (1973-05-25).
TR567 Deformation occurring during the deposition of' polycrystalline-silicon films (1973-06-01).
TR558 Hall mobility in single-crystal silicon films formed by electrochemical etching (1973-07-25).
Kamins, T. I., Hall mobility in chemically deposited polycrystalline silicon. Journal of Applied Physics, vol. 42, iss. 11(1971): 4357-4365.
Kamins, T .I., A new dielectric isolation technique for bipolar integrated circuits using thin single-crystal silicon films. Proceedings of the IEEE, vol. 60, iss. 7. (1972): 915-916.
Kamins, T. I., Manoliu, J. and Tucker, R. N. Diffusion of impurities in polycrystalline silicon. Journal of Applied Physics, vol. 43, iss. 1 (1972): 83-91.
Kamins, T. I., and Meieran, E. S. X-ray measurements of stress in thin single-crystal silicon films. Journal of Applied Physics, vol. 44, iss. 11 (1973): 5064-5066.