Artifact Details

Description

“Application of Refractory Metal Silicides in IC Technology.”

Date

1980-08-18-1981-08-11

Author

Shepherd, Bill (William) H.

Biographical Notes

William (Bill) H. Shepherd joined Fairchild circa 1963. He was a Member of Technical Staff in the Materials and Processes Dept reporting to Harry Sello in 1966 and head of the Silicon Processes section in 1968. He later worked for National Semiconductor and in the mid-1990s for Prolinx Labs Corporation in San Jose, California.

Publisher

Fairchild Semiconductor

Identifying Numbers

Document number

80-2233

Extent

1 entry over 2 pages.

Dimensions

12 x 10 inches

Patents

The author is named as inventor on 10 U.S patents, including 2 patents assigned to Fairchild:

U.S. patent 3702427, “Electromigration resistant metallization for integrated circuits, structure and process.” Filed 1971-02-22. Issued 1972.

U.S. patent 4151540, “High beta, high frequency transistor structure.” Filed 1977-12-08. Issued 1979-04-24.

Category

Notebooks

Collection Title

Fairchild Semiconductor notebooks and technical papers

Publications

The author contributed to the following R&D Technical Reports (TR) during his service at Fairchild:

TR139 Vapor phase etching and epitaxial deposition of silicon (1963-10-19).

TR210 Vapor phase etching of silicon in horizontal epitaxial reactors (1965-04-26).

TR217 Influence of gaseous contaminants on the epitaxial growth of silicon (1965-06-18).

TR247 The doping of epitaxial silicon films (1966-04-13).

TR254 Autodoping in epitaxial reactors. I. arsenic (1966-07-12).

TR431 Origin of defects in photomasking procedures (1969-10-01).

TR495 Characterization studies of the Gyrex Model 820 Roller Coater (1970-12-14).

TR506 Reduction of electromigration-induced failure in aluminum metallization through anodization (1971-03-29).

Credit

Gift of Texas Instruments Incorporated

Lot Number

X6464.2012