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Details

Catalog Number

102723027

Title

Shyam patent notebook (#717)

Type

Text

Date

1968-07-19-1968-10-29

Author

Shyam, Megha (K. S. Meghashyam)

Biographical Notes

Megha Shyam (also known as K. S. Meghashyam) was born in India. He attended the University College of Engineering of Osmania University, India (Electrical Engineering 1956–1960) and the Indian Institute of Science in Bangalore (Electrical Communication Engineering 1960–1961). In the U.S. he attended Harvard University (Applied Physics 1961–1963) and Stanford University (Electrical Engineering 1963–1966). He joined Fairchild circa 1966 where in 1968 he worked on compound semiconductor device technology in the New Phenomena section reporting to (later Nobel Prize winner) Herbert Kroemer. Subsequent employment included R&D Manager at Bell and Howell (1970–1972); Reliability Manager at American Microsystems Inc. (1972–1974); Member of Technical Staff at Data General (1974–1975); Reliability Manager at Synertek (1975–1977); Technical Staff at Hewlett-Packard (1977–1990); Sparcom Corporation co-founder (1990–1996); and da Vinci Technologies, Owner (1996–2002).

Publisher

Fairchild Semiconductor

Identifying Numbers

Document number 717

Extent

Approximately 17 dated entries over 125 pages. Many entries are undated.

Dimensions

12 x 10 inches

Description

Records the results of experiments on Gunn Effect diode high-frequency oscillators made using vapor-deposited epitaxial GaAs (TR420, below). Page 38 describes the specifications for a solid state local oscillator (6 GHz) for missile-borne radar use requested by the Fairchild Microwave Products business unit. Page 110 reports on the etching characteristics of GaAs. Several pages are left blank between separate entries.

Category

Notebooks

Collection Title

Fairchild Semiconductor notebooks and technical papers

Publications

The author contributed to the following R&D Technical Reports (TR) and papers in professional publications during his service at Fairchild:

TR320 Transverse negative differential mobilities for hot electrons and domain formation in germanium (1968-01-11).

TR361 Electrical evaluation of epitaxial layers of silicon (1968-09-23).

TR420 Gunn Effect oscillator – a study in device design (1969-07-22).

TR424 Low field transport properties of electrons and holes in GaAs (1969-08-15).

TR478 Some preliminary design considerations of surface acoustic wave filters for IF amplifier applications in the frequency range 10-200 MHz (1970-07-29).

Ivanek, F., Reddi, V.G.K. and Shyam, M. Mode identification for an oscillator using solid-state active devices in a waveguide-below-cutoff resonator. Electronics Letters, vol. 6, iss. 6 (1970): 151-152.

Shyam, M. Gunn oscillations in indium arsenide C.W. operation of l.s.a. oscillators in R band. Electronics Letters, vol. 6, iss. 10 (1970): 315-317 .

Shyam, M. Transverse negative differential mobility for hot electrons and domain formation in n-type germanium. IEEE Transactions on Electron Devices, vol. 15, iss. 9 (1968): 691.

Shyam, M. and Kroemer, H. Transverse negative differential mobilities for hot electrons and domain formation in germanium. Applied Physics Letters, vol. 12, iss. 9 (1968): 283-285.

Credit

Gift of Texas Instruments Incorporated

Lot Number

X6464.2012