Artifact Details


Sklar patent notebook (#1105)

Catalog Number







Sklar, Maija

Biographical Notes

Maija Sklar was the first female engineer to be hired by Fairchild. She worked for Bruce Deal at Raytheon Semiconductor in Mountain View and followed him to Fairchild in 1963. She handled his experimental process runs primarily focused on understanding issues related to oxidation and its role in MOS instability and surface states. A 1966 organization chart shows Sklar as an Engineer A in the Surfaces-Device Theory section led by A. Grove that reported to C. Bittmann, head of the Solid State Physics Department. This section that included B. Deal, E. Snow, and R. Whittier resolved many of the fundamental technological issues associated with stable, commercial MOS devices. Her work was an important contributor to the 1967 paper “Characteristics of the surface-state charge (Qss) of thermally oxidized silicon” with Deal, Grove and Snow that is the fifth most frequently cited paper in the history of the Electrochemical Society. She retired from Fairchild in 1986.


Fairchild Semiconductor

Identifying Numbers

Document number 1105


Approximately 131 dated entries over 121 pages.


12 x 10 inches


This volume comprises a daily log of the author’s activities and equipment issues involved with managing special processing runs for Bruce Deal and others associated with MOS stability investigations. It contains meticulous documentation of equipment issues, nature and purpose of experiments, new equipment and material purchases. Technical Reports published during the period covered by this volume include TR# 460 and 514 (below).



Collection Title

Fairchild Semiconductor notebooks and technical papers


The author contributed to the following R&D Technical Reports (TR) and papers in professional publications during her service at Fairchild:

TR147 Surface channels on silicon. II. Optimum processing procedures for fabrication of MOS (1963-12-16).

TR174 Surface channels on silicon. IV. A detailed investigation of silicon surface characteristics (1964-05-19).

TR188 Thermal oxidation of heavily-doped silicon (1964-08-28).

TR211 Variations in surface charge density of MOS structures (1965-05-05).

TR261 Characteristics of the surface-state charge of thermally oxidized silicon (1966-08-11).

TR347 Effect of cleaning and drying procedures on MOS stability (1968-06-24).

TR369 Properties of phosphovapox part III (1968-12-06).

TR370 Properties of phosphovapox part IV (1969-06-20).

TR460 Measurement and control of Qo and Qss during processing of thermally oxidized silicon devices (1970-04-07).

TR514 Si-gate processing monitoring program (1971-06-04).

Deal, B. E., Sklar, M., Grove, A. S., and Snow, E. H. Characteristics of the surface-state charge (QSS) of thermally oxidized silicon. Journal of the Electrochemical Society, vol. 114, iss. 3 (1967): 266-274.


Gift of Texas Instruments Incorporated

Lot Number