TitleSklar patent notebook (#769)
Biographical NotesMaija Sklar was the first female engineer to be hired by Fairchild. She worked for Bruce Deal at Raytheon Semiconductor in Mountain View and followed him to Fairchild in 1963. She handled his experimental process runs primarily focused on understanding issues related to oxidation and its role in MOS instability and surface states. A 1966 organization chart shows Sklar as an Engineer A in the Surfaces-Device Theory section led by A. Grove that reported to C. Bittmann, head of the Solid State Physics Department. This section that included B. Deal, E. Snow, and R. Whittier resolved many of the fundamental technological issues associated with stable, commercial MOS devices. Her work was an important contributor to the 1967 paper “Characteristics of the surface-state charge (Qss) of thermally oxidized silicon” with Deal, Grove and Snow that is the fifth most frequently cited paper in the history of the Electrochemical Society. She retired from Fairchild in 1986.
ExtentApproximately 215 dated entries over 152 pages.
Dimensions12 x 10 inches
DescriptionThis volume comprises a daily log of the author’s activities and equipment issues involved with managing special processing runs for Bruce Deal and others. During this period Sklar managed runs designated BED-828 through BED-1069. Compared to previous volumes this book contains more commentary and less specific run details. Work predominantly addressed oxide characteristics associated with investigations into MOS device stability. Technical Reports published during the period covered by this volume include TR374, TR369, and TR370 (below).
Collection TitleFairchild Semiconductor notebooks and technical papers
PublicationsThe author contributed to the following R&D Technical Reports (TR) and papers in professional publications during her service at Fairchild:
TR147 Surface channels on silicon. II. Optimum processing procedures for fabrication of MOS (1963-12-16).
TR174 Surface channels on silicon. IV. A detailed investigation of silicon surface characteristics (1964-05-19).
TR188 Thermal oxidation of heavily-doped silicon (1964-08-28).
TR211 Variations in surface charge density of MOS structures (1965-05-05).
TR261 Characteristics of the surface-state charge of thermally oxidized silicon (1966-08-11).
TR347 Effect of cleaning and drying procedures on MOS stability (1968-06-24).
TR369 Properties of phosphovapox part III (1968-12-06).
TR370 Properties of phosphovapox part IV (1969-06-20).
TR460 Measurement and control of Qo and Qss during processing of thermally oxidized silicon devices (1970-04-07).
TR514 Si-gate processing monitoring program (1971-06-04).
Deal, B. E., Sklar, M., Grove, A. S., and Snow, E. H. Characteristics of the surface-state charge (QSS) of thermally oxidized silicon. Journal of the Electrochemical Society, vol. 114, iss. 3 (1967): 266-274.