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Catalog Number

102723046

Title

Waits patent notebook (#199)

Type

Text

Date

1963-04-01-1971-06-15

Author

Waits, Robert K.

Biographical Notes

Robert K. Waits joined Fairchild circa 1962 and remained with the company until circa 1971. In 1966 he was a Senior Engineer in the Exploratory Devices section of the Physics Department reporting to C. Bittmann. In 1968 he was working in the thin films section. Research into thin film technology for fabricating high value resistors comprised the bulk of his activity during his career with the company.

Publisher

Fairchild Semiconductor

Identifying Numbers

Document number 199

Extent

Approximately 32 dated entries over 91 pages.

Dimensions

12 x 10 inches

Description

This volume describes techniques and results of experiments used for vacuum deposition of high-value resistors on integrated circuits. Specific entries include; Hih resistivity thin film resistors (p. 12); two-layer silicon metal resistors (pp. 14-23); micropower functional electronic blocks (pp. 46-50); molybdenum disilicide Schottky barrier (pp. 66-73); A. Yu comments on “Silicide Schottky Barrier” (pp. 74-77); and ion-implanted resistive films (p.84).

Patents

The author is named as inventor on 3 U.S patents. All are assigned to Fairchild.

U.S. patent 3649945, “Thin film resistor contact.” Filed 1971-01-20. Issued 1972.

U.S. patent 3458847, “Thin-film resistors.” Filed 1967-09-21. Issued 1969-07-29.

U.S. patent 3594225, “Thin-film resistors.” Filed 1967-09-21. Issued 1971-07-20.

Category

Notebooks

Collection Title

Fairchild Semiconductor notebooks and technical papers

Publications

The author contributed to the following R&D Technical Reports (TR) and papers in professional publications during his service at Fairchild:

TR84 Evaporated nichrome resistors (1962-09-17).

TR104 Vacuum technology handbook (1963-01-23).

TR105 Nichrome resistor noise - preliminary data (1963-02-28).

TR113 Deposited nichrome resistors – II (1963-04-30).

TR212 Vaporization of alumina/silica mixtures (1965-05-26).

TR302 Silicon-chromium electron-beam deposited resistive films (1967-07-31).

TR321 Laser-adjustment of SiCr thin films resistors (1968-01-18).

TR350 Sputtered silicon-chromium resistive films (1968-07-01).

TR466 Molybdenum silicide thin-film resistors (1970-04-20).

TR499 Silicide resistors for integrated circuits (1971-02-22).

TR523 Predicting resistor tolerance (1971-07-23).

Bittmann, C.A., Wilson, G.H., Whittier, R.J. and Waits, R.K. Technology for the design of low-power circuits. IEEE Journal of Solid-State Circuits, vol. 5, iss. 1 (1970): 29 – 37.

Waits, R. K. Abstract: Silicon–chromium thin-film resistor reliability. Journal of Vacuum Science and Technology, vol. 10, iss. 1 (1973): 285.

* Waits, R.K. Silicide resistors for integrated circuits. Proceedings of the IEEE, vol. 59, iss. 10 (1971): 1425-1429.

Yu, A.Y.C., Gopen, H.J. and Waits, R.K. Ohmic contacts to GaAs. 1970 International Electron Devices Meeting, vol. 16 (1970): 148.

* Paper included in the set of three bound volumes of “Fairchild Research Published Technical Papers” assembled by Bruce Deal in 1988

Credit

Gift of Texas Instruments Incorporated

Lot Number

X6464.2012