TitleSah patent notebook (#17)
Biographical NotesChih-Tang (Tom) Sah was born in Beijing, China, in 1932. He received B.S. degrees in Electrical Engineering and Engineering Physics from the University of Illinois in 1953 and an M.S. in 1954 and Ph.D. in 1956 from Stanford University. He joined Shockley Semiconductor Laboratory in 1956, co-authoring an important 1957 paper on electron-hole recombination with William Shockley and Robert Noyce. He worked at Fairchild Semiconductor Corporation from 1959 to 1964 where he was head of the Physics and Technology Department reporting to Gordon Moore that developed wafer fabrication processes for manufacturing transistors and ICs. He also helped to organize a research group that included Bruce Deal, Andy Grove and Ed Snow that made significant contributions to understanding MOS technology in the mid-1960s. From 1962 to 1988 (for 2 years overlapping with his service at Fairchild) he was a professor of physics and electrical engineering at the University of Illinois where he reported to co-inventor of the transistor, Professor John Bardeen. From 1988 to 2010 he was Graduate Research Professor at the University of Florida. In 2010 he became affiliated with the Physics Department of Xiamen University, China. Sah has received widespread recognition and awards for his contributions to the development of semiconductor technology.
PublisherFairchild Semiconductor Corporation
ExtentApproximately 38 dated entries over 130 pages.
Dimensions12 x 10 inches
DescriptionThis volume is largely devoted to calculations and results of experimental work on diffused and alloy tunnel diode structures and Sah’s invention of the Surface Potential Controlled Transistor (SPCT), Fairchild’s first foray into MOS technology and the idea for a Superconductor transistor as disclosed to Moore and Noyce (at Kirk’s Steakburgers, Palo Alto) and Professor Bardeen at the University of Illinois (p. 126). Tunnel Diode topics (see TR10, 11, 21 below) include, low resistivity crystals for tunnel diodes (p. 6); apparatus and measurements for tunnel diodes (p. 13); Noyce’s suggestion for surface tunnel diodes (p. 28); circuit considerations for video amplifiers (p. 80); UHF oscillator (p. 98). SPCT topics (see patents and TRs, below) include, disclosure of two new ideas in solid state amplifiers and oscillators (p. 114); results of first devices (p. 119).
This is one of 2 books issued to the author. The other book is Lab.
PatentsThe author is named as inventor on 5 U.S. patents, including 3 patents assigned to Fairchild:
U.S. patent 3204160, “Surface potential controlled semiconductor device.” Filed 1961-04-12. Issued 1965-08-31.
U.S. patent 3243669, “Surface potential controlled semiconductor device.” Filed 1962-06-11. Issued 1966-03-29.
U.S. patent 3280391, “High frequency transistors.” Filed 1964-01-31. Issued 1966-10-18.
Collection TitleFairchild Semiconductor notebooks and technical papers
PublicationsThe author contributed to the following R&D Technical Reports (TR) and papers in professional publications during his service at Fairchild.
TR10 Design of tunnel diodes [1959-10-31].
TR11 Boron & phosphorus diffusion coefficient and phosphorus predeposition data in Silicon [1959-11-11].
TR21 Silicon tunnel diodes - experimental techniques and data [1960-05-01].
TR24 Effects of electrons and holes on the transition layer characteristics of linearly graded junctions [1960-09-20].
TR28 On the solid solubility of gold in silicon [1960-11-01].
TR38 Electronic processes and excess currents in gold- doped narrow silicon junctions [1961-03-01].
TR46 A new semiconductor tetrode, the surface-potential controlled transistor [1961-06-26].
TR58 Effect of surface recombination and channel on p-n junction and transistor characteristics [1961-06-26].
TR98 Nanowatt logic using field effect metal-oxide semiconductor-triodes (MOSTs) [1963-01-23].
TR114 Theoretical calculation of the capacity-voltage relationship of metal-oxide-semiconductor capacitors [1963-04-22].
TR133 Calculation of switching times in diodes [1963-08-26].
TR134 Effect of nuclear radiation on the low level transistor current gain [1963-08-30].
TR150 Frequency dependence of the reverse biased capacitance of gold doped silicon p+ step junctions [1964-01-23].
TR151 Characteristics of the metal-oxide-semiconductor transistors [1964-01-24].
TR152 Theory of low frequency generation noise in unipolar junction-gate field effect transistors [1964-02-14].
TR155 diffusion of gallium through a silicon dioxide layer [1964-02-14].
TR159 Switching transients in one-dimensional p-n junctions [1964-02-21].
TR166 Redistribution of acceptor and donor impurities during thermal oxidation of silicon [1964-03-25].
TR169 Low frequency generation noise in junction FETs [1964-04-24].
TR177 Investigation of thermally oxidized silicon surfaces using metal-oxide semiconductor structures [1964-05-25].
TR184 Electron and hole mobilities in inversion layers on thermally oxidized silicon surfaces [1964-11-17].
TR189 Impurity distribution in epitaxial growth [1964-09-29].
TR190 Ion transport phenomena in insulating films [1964-10-15].
Bogert, H., Sah, C. and Tremere, D. Applications of the surface potential controlled transistor tetrodes. 1962 IEEE International Solid-State Circuits Conference: Digest of Technical Papers, vol. V (1962): 34-35.
Grove, A.S., Deal, B.E., Snow, E.H. and Sah, C.T. Investigation of thermally oxidized silicon surfaces using metal-oxide-semiconductor structures. IEEE Transactions on Electron Devices, vol. 11, iss. 11 (1964): 531.
Grove, A. S., Leistiko, O. and Sah, C. T. Redistribution of acceptor and donor impurities during thermal oxidation of silicon. Journal of Applied Physics, vol. 35, iss. 9 (1964): 2695-2701.
Grove, A. S., Roder, A. and Sah, C. T. Impurity distribution in epitaxial growth. Journal of Applied Physics, vol. 36, iss. 3 (1965): 802-810.
Grove, A. S., Snow, E. H., Deal, B. E. and Sah, C. T. Simple physical model for the space charge capacitance of metal-oxide semiconductor structures. Journal of Applied Physics, vol. 35, iss. 8 (1964): 2458-2460.
Lauritzen, P.O. and Sah, C.T. 1/f noise in surface potential controlled junctions. IRE Transactions on Electron Devices, vol. 9, iss. 6 (1962): 507.
Lauritzen, P.O. and Sah, C.T. Low-frequency recombination-generation noise in silicon FET's. IEEE Transactions on Electron Devices, vol. 10, iss. 5 (1963): 334-335.
Leistiko, O., Jr., Grove, A.S. and Sah, C.T. Electron and hole mobilities in inversion layers on thermally oxidized silicon surfaces. IEEE Transactions on Electron Devices, Vol. 12, Iss. 5 (1965): 248-254.
Pao, H.C. and Sah, C.T. Effect of diffusion current on the device characteristics of insulated-gate field-effect transistor. IEEE Transactions on Electron Devices, vol. 12, iss. 9 (1965): 509.
Reddi, V.G.K. and Sah, C.T. Source to drain resistance beyond pinch-off in metal-oxide-semiconductor transistors (MOST). IEEE Transactions on Electron Devices, vol. 12, iss. 3 (1965): 139-141.
Sah, C.T. Characteristics of the metal-oxide-semiconductor transistors. IEEE Transactions on Electron Devices, vol. 11, iss. 7 (1964): 324-345.
Sah, C.T. Effects of electrons and holes on the transition layer characteristics of linearly graded p-n junctions. Proceedings of the IRE, vol. 49, iss. 3 (1961): 603-618.
Sah, C.T. Effect of surface recombination and channel on diode and transistor characteristics. IRE Transactions on Electron Devices, vol. 8, iss. 5 (1961): 424-425.
Sah, C.T. A new semiconductor tetrode-the surface-potential controlled transistor. Proceedings of the IRE, vol. 49, iss. 11 (1961): 1623-1634.
Sah, C.T. Theory and experiments on the 1/f surface noise of MOS insulated-gate field-effect transistors. IEEE Transactions on Electron Devices, vol. 11, iss. 11 (1964): 534.
Sah, C.T. Theory of low-frequency generation noise in junction-gate field-effect transistors. Proceedings of the IEEE, vol. 52, iss. 7 (1964): 795-814.
Sah, C.T., Collins, D.R. and Pao, H.C. Experimental evidences of the interdependences of the fixed charges, the chargeable surface states and the bulk impurity recombination states in the silicon-oxide silicon structures. IEEE Transactions on Electron Devices, vol. 12, iss. 9 (1965): 505.
Sah, C.T. and Pao, H.C. The effects of fixed bulk charge on the characteristics of metal-oxide-semiconductor transistors. IEEE Transactions on Electron Devices, vol. 13, iss. 4 (1966): 393-409.
Sah, C.T. and Reddi, V.G.K. Frequency dependence of the reverse-biased capacitance of gold-doped silicon p+n step junctions. IEEE Transactions on Electron Devices, vol. 11, iss. 7 (1964): 345-349.
Snow, E. H., Grove, A. S., Deal, B. E. and Sah, C. T. Ion transport phenomena in insulating films, Journal of Applied Physics, vol. 36, iss. 5 (1965): 1664-1673.
Wanlass, F. and Sah, C. Nanowatt logic using field-effect metal-oxide semiconductor triodes. 1963 IEEE International Solid-State Circuits Conference: Digest of Technical Papers, vol. VI (1963): 32-33.