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Catalog Number

102723936

Title

Delfino patent notebook (#1981)

Type

Text

Date

1979-07-18-1983-09-06

Author

Delfino, Mike

Biographical Notes

Prior to joining Fairchild circa 1979, Michaelangelo (Mike) Delfino worked for Philips Laboratories, Briarcliff Manor, New York. At Fairchild he investigated silicon wafer annealing technologies using a variety of sources to circa 1983. In 1988 he is recorded as working for the Signetics Division of North American Philips Corp., Sunnyvale, California.

Publisher

Fairchild Semiconductor

Identifying Numbers

Document number 79-1981

Extent

Approximately 22 dated entries over 46 pages

Dimensions

12 x 10 inches

Description

This volume describes experiments on solar, laser and microwave induced annealing of silicon, silicon dioxide glass, silicon nitride, and other materials. “Surface annealing of Phosphosilicate glasses" (page 1); “Silicide structures for pulsed E-beam” (p. 6);”Infrared laser annealing” (p. 29); “Microwave annealing of spin-on oxide” (p. 34).

Patents

The author is named as inventor on 2 U.S. patents. None were assigned to Fairchild.

Category

Notebooks

Collection Title

Fairchild Semiconductor notebooks and technical papers

Publications

The author contributed to the following R&D Technical Reports (TR) and papers in professional publications during his service at Fairchild:

*Delfino, M., CO laser annealing of arsenic‐implanted silicon. Journal of Applied Physics, vol. 53, iss. 5 (1982): 3923 – 3925.

*Delfino, M., Laser activated flow for integrated circuit fabrication. Laser Processing of Semiconductor Devices, vol. Proceedings SPIE 0385, (1983-08-09): 32-37.

*Delfino, M., Phosphosilicate glass flow over aluminum in integrated circuit devices. IEEE Electron Device Letters, vol. 4, iss. 3 (1983): 54-56.

Delfino, M., Milgram, A. and Strathman, M. D., Epitaxial regrowth of silicon implanted with argon and boron. Applied Physics Letters, vol. 44, iss. 6 (1984): 594-596.

*Delfino, M. and Razouk, R. R., A four‐phase complex refractive index model of ion‐implantation damage: Optical constants of phosphorus implants in silicon. Journal of Applied Physics, vol. 52, iss. 1 (1981): 386-392.

*Delfino, M. and Reifsteck, T. A., CW laser activated flow applied to the planarization of metal‐oxide‐semiconductor field‐effect transistor structures. Applied Physics Letters, vol. 42, iss. 8 (1983): 715-717.

*Delfino, M. and Reifsteck, T. A., Laser activated flow of phosphosilicate glass in integrated circuit devices. IEEE Electron Device Letters, vol. 3, iss. 5 (1982): 116-118

Milgram, A. and Delfino, M., Effect of argon implantation on the activation of boron implanted in silicon. Applied Physics Letters, vol. 42, iss. 10 (1983): 878-880.

*Razouk, R. R., Delfino, M., Fulks, R. T., Powell, R. A. and Yep, T. O., Oxide charges induced in thermal silicon dioxide by scanning electron and laser beam annealing. Journal of Applied Physics, vol. 53, iss. 1 (1982): 800-803.

* This paper is included in a three volume bound set of “Fairchild Research Published Technical Papers” assembled by Bruce Deal in 1988 (copy in the CHM Fairchild collection).

Credit

Gift of Texas Instruments Incorporated

Lot Number

X6464.2012