TitleDell'Oca patent notebook (#875)
AuthorDell’Oca, Conrad J.
Biographical NotesConrad Dell’Oca received a B.A.Sc. and M.A.Sc. in Engineering Physics and a Ph.D. in Electrical Engineering from the University of British Columbia. He worked at Fairchild in the 1970s. From 1981 to 1991 he served as Vice President, Research and Development of LSI Logic Corporation. From 1992 to 1999 he served as CEO and President and from 1997 to 2001 as Chairman of Ingenuus Corporation.
ExtentApproximately 60 dated entries over 81 pages.
Dimensions12 x 10 inches
DescriptionUse of ellipsometry, an optical technique for the investigation of the dielectric properties of thin films, to study conversion of SiN4 using a computer program developed by Dell’Oca at the University of British Columbia; Al anodization processes; deposition of molybdenum; determination of polysilicon thickness (reported in TR492, below); scratch protection methods.
PatentsThe author is named as inventor on 6 U.S. patents. One patent is assigned to Fairchild:
U.S. patent 3702427, “Electromigration resistant metallization for integrated circuits, structure and process.” Filed 1971-02-22. Issued 1972.
Collection TitleFairchild Semiconductor notebooks and technical papers
PublicationsThe author contributed to the following R&D Technical Reports (TR) and papers in professional publications during his service at Fairchild:
TR492 Non-destructive thickness determination of polycrystalline silicon deposited on oxidized silicon (1970-10-28).
TR500 In-process thickness monitor for polycrystalline silicon deposition (1971-02-22).
Wang, A. S. and Dell'Oca, C. J., A compatible bipolar and JFET process.1976 International Electron Devices Meeting, vol. 22 (1976): 45 – 47.