Artifact Details

Title

Bittmann patent notebook (#234)

Catalog Number

102723949

Type

Text

Date

1962-08-09-1968-07-01

Author

Bittmann, Charles A.

Biographical Notes

Charles (Charlie) A. Bittmann received an M.E. degree in 1945 from Stevens Institute of Technology, Hoboken, New Jersey. He worked at Bell Labs, Murray Hill, New Jersey. circa 1958 and was a department manager at Raytheon (formerly Rheem) Semiconductor in Mountain View before moving to the Fairchild R&D Laboratory located in Palo Alto in 1962. A 1966 organization chart shows Bittmann as Section Manager responsible for Exploratory Devices and reporting to Gordon Moore as Acting Manager of the Solid State Physics Department. In 1968 he was Manager of the Physics Department.

Publisher

Fairchild Semiconductor

Identifying Numbers

Document number 234

Extent

24 dated entries over 29 pages.

Dimensions

12 x 10 inches

Description

Proposals and results of fabrication of several unique device types, including diodes, junction FET, and Gunn Effect devices. Significant entries include “Proposal of method of fabricating Gunn effect devices” (p. 22) (1968-01-13); and “Method of fabricating a passivated Gunn effect device” (p. 25) that describes work that led to U.S. patent 3537919 (see below).

Patents

The author is named as inventor on 3 patents assigned to Fairchild:

U.S. patent 3397450, “Method of forming a metal rectifying contact.” Filed 1964-01-31. Issued 1968-08-20.

U.S. patent 3493821, “Microwave negative resistance avalanche diode.” Filed 1967-01-27. Issued 1970-02-03.

U.S. patent 3537919, “Method of fabrication of Gunn Effect devices.” Filed 1968-05-22. Issued 1970-11-03.

Category

Notebooks

Collection Title

Fairchild Semiconductor notebooks and technical papers

Publications

The author contributed to the following R&D Technical Reports (TR) and conference papers during his service at Fairchild:

TR 116 R. F. evaluation of an epitaxial field effect transistor of the U-2 geometry (1963-05-10).

TR 142 Examination and evaluation of Hewlett Packard Associates hot electron diodes (1963-10-21).

TR 414 Technology for the design of low power circuits (1969-06-23).

Bittmann, C. A., Wilson, G. H., Whittier, R. J. and Waits, R. K., Technology for the design of low-power circuits. IEEE Journal of Solid-State Circuits, vol. 5, iss. 1 (1970): 29-37.

Frescura, B. L., Luechinger, H. and Bittmann, C. A., Large high-density monolithic XY-addressable arrays for flat-panel LED displays. IEEE Transactions on Electron Devices, vol. 24, iss. 7 (1977): 891-897.

Credit

Gift of Texas Instruments Incorporated

Lot Number

X6464.2012