Title
Razouk patent notebook (#1716)Catalog Number
102723968Type
DocumentDescription
This volume contains descriptions of experiments and process flows designed to round off the sharp edges of oxide layers on the surface of ICs, including phosphosilicate glass at high pressure (p. 2); minimize lateral oxidation (bird beak formation) (p. 5 – 8); As (arsenic) doping (p. 9).Date
1980-06-16-1985-12-11Author
Razouk, Reda R.Biographical Notes
Reda R. Razouk was born in Cairo, Egypt, in 1949. He received B.S.E.E. (1971), M.S.E.E. (1972), and Ph.D. (1977) degrees from Purdue University where his doctoral research involved the fabrication and modeling of microwave devices. He joined the Fairchild Research Center in 1977 where he worked on the characterization of thin dielectric films with emphasis on interfacial properties, charge trapping, and radiation sensitivity of thin thermal silicon dioxide films. He was involved in the development of advanced NMOS, CMOS and BiCMOS processes in the VLSI Research Group from 1982 to 1987. In 1987 he joined the Philips Research Laboratory in Sunnyvale, California, as Manager of the Device Physics and Modeling Group.Publisher
Fairchild SemiconductorIdentifying Numbers
| Document number | 77-1716 |
Extent
Approximately 10 dated entries over 23 pages.Dimensions
12 x 10 inchesCategory
NotebooksCollection Title
Fairchild Semiconductor notebooks and technical papersPublications
The author contributed to the following papers in professional publications during his service at Fairchild:Brassington, M.P.and Razouk, R.R. The relationship between gate bias and hot-carrier-induced instabilities in buried- and surface-channel PMOSFETs. IEEE Transactions on Electron Devices, vol. 35, iss. 3 (1988): 320-324.
Brassington, M.P., Razouk, R.R. and Hu, C. Localized interface trap generation in SILO-isolated MOSFETs. IEEE Transactions on Electron Devices, vol. 35, iss. 1 (1988): 96-100.
Chan, T.Y., Wu, A.T., Ko, P.K., Hu, C. and Razouk, R.R. Asymmetrical characteristics in LDD and minimum-overlap MOSFET's. IEEE Electron Device Letters, vol. 7, iss. 1 (1986): 16-19.
DeBlasi, J. M., Razouk, R. R. and Thomas, M. E. Characteristics of TaSi2 / poly-Si films oxidized in steam for VLSI applications. Journal of the Electrochemical Society, vol. 130, iss. 12 (1983): 2478-2482.
Delfino, M. and Razouk, R.R. A four‐phase complex refractive index model of ion‐implantation damage: Optical constants of phosphorus implants in silicon. Journal of Applied Physics, vol. 52, iss. 1 (1981): 386-392.
Lie, L.N., Razouk, R.R. and Deal, B.E. High pressure oxidation of silicon in dry oxygen. Journal of the Electrochemical Society, vol. 129 (1982): 2828.
Poindexter, E.H., Caplan, P.J., Deal, B.E., and R.R. Razouk, J. Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers. Journal of Applied Physics, vol. 52 (1981): 879.
Razouk, R.R. and Deal, B.E. Dependence of interface state density on silicon thermal oxidation process variables. Journal of the Electrochemical Society, vol. 126, iss. 9 (1979): 1573-1581.
Razouk, R.R. and Deal, B.E. Hydrogen anneal effects on metal-semiconductor-work function difference. Journal of the Electrochemical Society, vol. 129 (1982): 806.
Razouk, R. R., Delfino, M., Fulks, R.T., Powell, R.A. and Yep, T.O. Oxide charges induced in thermal silicon dioxide by scanning electron and laser beam annealing. Journal of Applied Physics, vol. 53, iss. 1 (1982): 800-803.
Razouk, R. R., Lie, L.N. and Deal, B.E. Kinetics of high pressure oxidation of silicon in pyrogenic steam. Journal of the Electrochemical Society, vol. 128, iss. 10 (1981): 2214-2220.
Rouse, J.W., Helms, C.R., Deal, B.E., and Razouk, R.R. Auger sputter profiling studies of SiO2 grown in 02/HCI mixtures. Journal of Vacuum Science and Technology, vol. 18, iss. 3 (1981): 971-972.
Rouse, J.W., Helms, C.R., Deal, B.E., and Razouk, R.R. Auger sputter profiling and secondary ion mass spectrometry studies of SiO2 grown in 02/HCI mixtures. Journal of the Electrochemical Society, vol. 131 (1984): 887.