Zhores Alferov was born in Vitebsk, Byelorussia in 1930. In 1947, he attended Leningrad Electrotechnical Institute in electronic engineering. Upon graduation, he entered the loffe Institute. He is currently Vice President of the Russian Academy of Sciences, loffe Physio-Technical Institute. Among his major accomplishments is the awarding of the Nobel Prize in physics for his research in semiconductor heterostructures used in high speed electronics.
This interview includes fascinating stories relating to his early life, growing up during WWII. His father had fought in WWI and later became a senior minister. Zhores’ education was in physics and electronics where he studied vacuum tubes. He began work in semiconductor physics and materials as early as 1949. He was involved in the earliest work on PN junction transistors in the Soviet Union.
semiconductor history; Nobel Prize; transistor; Ioffe Physical-Technical Institute of the Russian Academy of Sciences; Zelenograd; Svetlana Semiconductor; heterostructures; heterostructural lasers