Igor Grekhov was born in 1934 in Smolensk, Russia. He attended Moscow Technical University. He later earned a PhD in 1967 from loffe Insitute and Doctor Degree in 1974. At the time of the interview he was Head of the Solid State Electronics Division, loffe Institute, Russian Academy of Science. He was elected a Correspondent member of the Russian Academy in 1991 and a full member in 2008.
He worked at the Electro-rectifier factory in Saransk after graduation. He had studied mechanical engineering in the University, but was forced to make a rapid switch to the physics of semiconductors when he was assigned to the factory in Saransk. He began work there on power semiconductor devices. He then was invited to join loffe Institute, Academy of Science and has worked there 50 years – starting in 1962. He continued his work in power semiconductors after moving to loffe. He was awarded the Lenin Prize in 1966. This prize was the highest level scientific award in the Soviet Union.
semiconductor history; Ioffe Physical-Technical Institute of the Russian Academy of Sciences; Moscow Technical University; power diodes; Alferov, Zhores I.; Saransk, Russia; Lenin Prize