TitleSoftware differences programming the T-11
Date1981-10-12; 1982-03-01; 1982-03-24
AuthorForsythe, Donald Dave (David)
Biographical NotesDonald David (Dave) Forsythe joined Fairchild circa 1966 as a Senior Engineer in the Technology Development group reporting to C. Plough where he worked on printing techniques for hybrid ICs. In 1968 he reported to L. Vadasz in the MOS Circuit and Device Technology group. During this time he worked with T. Klein, D. Frohman and F. Faggin on MOS reliability projects. In 1980 he was employed at Synertek and after 1990 at National Semiconductor.
PublisherDigital Equipment Corporation (DEC
Extent1 volume (various pagings)
DescriptionThis folder contains 2 memos documenting the history of the T-11 engineering specifications.
Collection TitleAl Kossow collection
PublicationsThe author contributed to the following R&D Technical Reports (TR) and papers in professional publications during his service at Fairchild:
TR365 Anomalous link current (1968-11-01).
TR489 Room temperature instabilities observed on silicon-gate devices (1970-10-30).
Faggin, F., Forsythe, D. D. and Klein, T. Room temperature instabilities observed on silicon gate devices. 1970 8th Annual Reliability Physics Symposium (1970): 35-41.
*Forsythe, D.D. Surface-charge induced failures observed on MOS integrated circuits.
Microelectronics Reliability, vol. 8, iss. 4, (1969-11): 339-340.
Frohman-Bentchkowsky, D. and Forsythe, D.D. Reliability of MNOS integrated circuits. 1969 International Electron Devices Meeting, vol. 15 (1969): 48.
*Paper included in the set of three bound volumes of “Fairchild Research Published Technical Papers” assembled by Bruce Deal in 1988.