Grove patent notebook (#413)
Documentation of research into the electrical performance characteristics of experimental bipolar and MOS transistor and integrated circuit structures under various operating and stress conditions. Several new and improved device types are proposed. Several entries address issues of contamination, surface states, and device stability. These were major problems that limited the commercial exploitation of the small device size and low manufacturing cost advantages promised by MOS technology. Key entries include: Double ring structure - basis for U.S. patent 3463977 (p. 1); Breakdown phenomena involving field induced junction – work that led to TR236, below, (p. 14); Reduction of Surface State Density - based on discussions with B. E. Deal and E. H. Snow (p. 31) and hfe stability entry (p. 34) contributed work for U.S. patent 3513035 and TR261, below, and that in turn provided the basis for the paper “Characteristics of the surface-state charge (QSS) of thermally oxidized silicon,” the fifth most frequently cited paper in the history of the Electrochemical Society. Note: Work used in Grove’s important first paper (TR114 below) was performed prior to the period covered by this volume, this is likely the second notebook issued to Grove.
Item Details
- Date
- 1965-01-18-1968-05-21 (Made)
- Type
- Document
- Catalogue number
- 102722914
- Other identifying number
- 413 (Document Number)
- Organization
- Fairchild Semiconductor (Publisher)
- People
- Andrew S. Grove (Author)
- Category
- Notebooks
- Credit line
- Gift of Texas Instruments Incorporated
- Extent
- Approximately 18 dated entries over 48 pages.
- Language
- English
- Acquisition number
- X6464.2012
- Archive collection
- Fairchild Semiconductor notebooks and technical papers
- Archive hierarchy
- Fairchild Semiconductor notebooks and technical papers