TitleBarry patent notebook (#2276)
DescriptionDescribes a “Method for fabricating high-speed MOS read-only-memory”. One page of the planned disclosure was completed but then crossed out with no explanation.
AuthorBarry, Michael L.
Biographical NotesMichael (Mike) L. Barry served as a Member of Technical Staff in the Material and Processes Department of the R & D Lab from circa 1965 to circa 1987. A 1968 organization chart shows him in the Silicon Processes section reporting to W. Shepherd. His major research activity over this period was related to the chemical vapor deposition (CVD) of oxide to produce a material commonly known as Vapox and the specific applications of phosphovapox. During his Fairchild career Barry was named as inventor on at least one U.S. Patent, and published a minimum of 10 internal R&D Technical Reports (TR) and 5 technical papers in professional journals.
ExtentOnly one entry recorded on page 5.
Dimensions12 x 10 inches
PatentsThe author is named as inventor on 2 U.S patents assigned to Fairchild:
U.S. patent 3736193, “Single crystal-polycrystalline process for electrical isolation.” Filed 1969-06-29. Issued 1973-05-29.
U.S. patent 4762728, “Low temperature plasma nitridation process.” Filed 1985-11-26. Issued 1988-08-09.
Collection TitleFairchild Semiconductor notebooks and technical papers
PublicationsThe author contributed to the following R&D Technical Reports (TR) and conference papers during his service at Fairchild:
TR292 Deposition and properties of Vapox (1967-03-03).
TR354 Advances in doped oxides as diffusion sources (1968-08-13).
TR367 Properties of phosphovapox part I: deposition and structural properties (1968-11-11).
TR377 Doped oxides as diffusion sources I: boron into silicon (1968-15-05).
TR436 A continuous process for the deposition of silicon oxide from the oxidation of silane (1969-11-04).
TR461 Doped oxides as diffusion sources II: phosphorus into silicon (1970-05-20).
TR469 Diffusion from doped oxides (1970-05-01).
TR511 Processing effects on Qss of poly-silicon/thermal/oxide/silicon structures (1971-05-10).
TR528 The combination of silicon nitride .and aluminum anodization for semiconductor device passivation (1971-09-16).
TR541 Studies of electrochemical voiding of thin-film nichrome resistors (1972-10-04).
*Barry, M.L., A continuous process for the deposition of silicon oxide from the oxidation of silane. The Electrochemical Society, Chemical Vapor Deposition, Second International Conference, vol. 2 (1970): 595-560.
*Barry, M.L., Diffusion from doped-oxide sources: silicon device processing. N.B.S. Special Publication 337m. (1970): 175.
*Barry, M.L., Doped oxides as diffusion sources II: phosphorus into silicon. Journal of the Electrochemical Society, vol. 117, iss. 11 (1970): 1405-1410.
* Barry, M.L. and Manoliu, J., Further Verification of a Model for Diffusion from Doped Oxides. Journal of the Electrochemical Society, vol. 117, iss. 2 (1970): 258-259.
*Barry, M. L. and Olofsen, P., Advances in doped oxides as diffusion sources. Solid State Technology, vol. 2, no. 10 (1968): 39-42.
*Barry, M. L. and Olofsen, P., Doped oxides as diffusion sources I: boron into silicon. Journal of the Electrochemical Society, vol. 116, iss. 6 (1969): 854-860.
* This paper is included in a three volume bound set of “Fairchild Research Published Technical Papers” assembled by Bruce Deal in 1988 (copy in the CHM Fairchild collection).