Title
Chou laboratory notebook (Lateral PNP IV)Catalog Number
102722945Type
DocumentDescription
This is Volume IV in a series of notebooks recording the processing of wafer runs fabricated in the development of a lateral PNP transistor for use in Linear IC designs. It contains a day-by-day, minute-by-minute log of activity, including the results of a visual microscope inspection of the condition of the silicon surface and notes on additional processing to be applied to the material. It also includes switching speed measurement on Schottky barrier diodes (p. 27-35) and layout drawings for use of the lateral PNP in the uA735 amplifier (p. 39).Date
1969-07-15-1970-02-02Author
Chou, SunlinBiographical Notes
Sunlin Chou was born in Singapore and received B.S., M.S., and E.E. degrees from MIT in 1966, 1967, and 1968 respectively, all in electrical engineering. He joined Fairchild in 1968 where he worked on the development of a lateral PNP transistor and was involved in the set-up and operation of an ion implantation system while also earning a Ph.D. from Stanford University (1971). He moved to Intel Corporation in 1971, and worked on device modeling, memory design, and process development projects, before assuming responsibility for Intel’s DRAM process technology development effort. He was senior vice president and general manager of Intel’s Technology and Manufacturing Group when he retired in 2005. He was awarded the IEEE Robert Noyce Award in 2013.Publisher
Fairchild SemiconductorIdentifying Numbers
Document number | IV. |
Extent
Approximately 30 dated entries over 41 pages.Dimensions
10 x 8 inchesCategory
NotebooksCollection Title
Fairchild Semiconductor notebooks and technical papersPublications
The author contributed to the following R&D Technical Reports (TR) and papers in professional publications during his service at Fairchild:TR430 An investigation of lateral transistors I. DC characteristics [1968-9-10-06].
TR446 On the measurement of recombination currents in epitaxial base transistors [1969-12-12].
TR464 A study of diffused layers of arsenic and antimony in silicon using the ion scattering technique [1970-05-22].
TR504 An investigation of lateral transistors II - small signal characteristics [1971-03-26].
*S. Chou. An investigation of lateral transistors - D.C. characteristics [1971]. Solid-State Electronics, vol. 14, iss. 9 (1971-09): 811–826.
*S. Chou. Small-signal characteristics of lateral transistors [1972]. Solid-State Electronics, vol. 15, iss. 1 (1972-01): 27–38.
*S. Chou, L. A. Davidson, and J. F. Gibbons. A study of diffused layers of arsenic and antimony in silicon using the ion-scattering technique. Applied Physics Letters, vol. 17, iss. 1 (1970-07): 23.
* This paper is included in a three volume bound set of “Fairchild Research Published Technical Papers” assembled by Bruce Deal in 1988 (copy in the CHM Fairchild collection).