TitleHess patent notebook (#1470)
Hess, Dennis W.
Biographical NotesDennis W. Hess received a B.S. from Albright College (1968), M.S. (1970) and Ph.D. (1973) from Lehigh University. He joined Fairchild in 1973 and worked on thermal oxides and the investigation of surface state charge characteristics of CMOS and isoplanar technologies to circa 1977. During his Fairchild career Hess published a minimum of 10 technical papers in professional journals. In the 1980s he was associated with the Department of Chemical Engineering, at the University of California , Berkeley, and after 2000 with the Georgia Tech Research Corporation in Atlanta, Georgia. In 2012 he was Thomas C. DeLoach, Jr. Chair and Director of Georgia Tech’s NSF Materials Research Science and Engineering Center (MRSEC) for New Electronic Materials.
Approximately 42 dated entries over 134 pages.
12 x 10 inches
DescriptionThis volume describes experiments designed to minimize ionic contamination during the growth of oxides (p. 3); lowering surface state charge due to Drift XVII (pp. 9, 55 and others); the kinetics of oxide growth (p. 26); plasma etching (p. 80); steam oxidation and nitrogen anneal (p.84); analysis for chlorine (p. 105).
PatentsThe author is named as inventor on 10 U.S patents, none are assigned to Fairchild.
Collection TitleFairchild Semiconductor notebooks and technical papers
PublicationsThe author contributed to the following papers in professional publications during his service at Fairchild:
*Hess, D.W. Effect of chlorine on the negative bias instability in MOS structures. Journal of the Electrochemical Society, vol. 124 (1977): 740-743.
*Hess, D.W. and Deal, B.E. Effect of nitrogen and oxygen/nitrogen mixtures on oxide charges in MOS structures. Journal of the Electrochemical Society, vol. 122, iss. 8 (1975): 1123-1127.
*Hess, D.W. and Deal, B.E. Kinetics of the thermal oxidation of silicon in 02/N2 mixtures at 1200"C. Journal of the Electrochemical Society, vol. 122 (1975): 579.
*Hess, D.W. and Deal, B.E. Kinetics of the thermal oxidation of silicon in 02/HC1 mixtures. Journal of the Electrochemical Society, vol. 124 (1977): 735-739.
*Hess, D.W. and Learn, A.J. Effects of oxidation and nitrogen annealing on ion implantation induced interface states in the silicon-silicon dioxide system. Journal of Applied Physics, vol. 48, iss. 2 (1977-02): 834-836.
*Hess, D.W. and McDonald, R.C. Investigation of silicon etching and silicon dioxide bubble formation during silicon oxidation in HCl-oxygen atmospheres. Thin Solid Films, vol. 42, iss. 1 (1977): 127-131.
Learn, A. J. and Hess, D.W. Effects of ion implantation on charges in the silicon–silicon dioxide system. Journal of Applied Physics, vol. 48, iss. 1 (1977): 308-312.
*Paper included in the set of three bound volumes of “Fairchild Research Published Technical Papers” assembled by Bruce Deal in 1988. Copy in the CHM collection.