Artifact Details


Hower patent notebook (#593)

Catalog Number





This volume describes measurements and experiments on second breakdown performance of transistors and GaAs FETs. Specific entries include; a method of measuring second breakdown (pp. 3-7); reduction of output capacitance on fixed-channel MOST (pp. 40-47); use of gold to compensate MOST substrates (pp. 48-53); emitter current limiter (pp. 75-80); improving the performance of the GaAs FET (pp. 83-88).




Hower, Phil (Philip) L.

Biographical Notes

Philip (Phil) L. Hower joined Fairchild from Stanford University circa 1966 and remained until circa 1973. In 1968 he performed research into GaAs devices as an engineer in the Exploratory Devices section of the Physics department reporting to C. Bittmann. Circa 1976 he joined the Westinghouse Research and Development Center in Pittsburgh and in 1981 he was at MIT’s Lincoln Labs.


Fairchild Semiconductor

Identifying Numbers

Document number 593


Approximately 30 dated entries over 96 pages.


12 x 10 inches



Collection Title

Fairchild Semiconductor notebooks and technical papers


The author contributed to the following R&D Technical Reports (TR) and papers in professional publications during his service at Fairchild:

TR291 Output conductance of MOST's (1967-08-08).

TR429 Avalanche injection and second breakdown in transistors (1969-09-19).

TR498 Current saturation and small signal characteristics of GaAs field effect transistors (1971-02-01).

TR542 Optimum design of power transistor switches (1972-06-53).

Bechtel, N.G., Hooper, W.W. and Hower, P.L. Design and performance of the GaAs FET. IEEE Journal of Solid-State Circuits, vol. 5, iss. 6 (1970): 319 – 323.

Hooper, W.W. and Hower, P.L. A microwave GaAs field-effect transistor. 1967 International Electron Devices Meeting, vol. 13 (1967): 38.

Hower, P.L. Optimum design of power transistor switches. 1972 International Electron Devices Meeting, vol. 18 (1972): 126.

* Hower, P.L. and Krishna Reddi, V.G. Avalanche injection and second breakdown in transistors. IEEE Transactions on Electron Devices, vol. 17, iss. 4 (1970): 320-335.

Krishna, S. and Hower, P.L. Second breakdown of transistors during inductive turnoff. Proceedings of the IEEE, vol. 61, iss. 3 (1973): 393-395.

Spadea, G. and Hower, P.L. A new high-voltage planar transistor technology. 1971 International Electron Devices Meeting, vol. 17 (1971): 152

* This paper is included in a three volume bound set of “Fairchild Research Published Technical Papers” assembled by Bruce Deal in 1988 (copy in the CHM Fairchild collection).


Gift of Texas Instruments Incorporated

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