TitleLauritzen patent notebook (#160)
DescriptionDescribes experiments to measure the noise characteristics of field effect transistors (FET), including the SCT (C.T. Sah’s four terminal MOS transistor), and zener diodes. This work was published in two papers published in 1962 (below).
AuthorLauritzen, Peter O.
Biographical NotesPeter O. Lauritzen was born in Valparaiso, Indiana, on February 14, 1935. He received a B.S.E.E. degree from the California Institute of Technology (1956), and an M.S.E.E. (1958) and Ph.D. degrees (1961) from Stanford University. From 1961 to 1965 he was a Member of the Technical Staff working on semiconductor device research and development at Fairchild Semiconductor R&D in Palo Alto, California. He joined the faculty of the University of Washington in 1965. His research areas from 1965 to 1978 included semiconductor device noise, radiation effects, and device operation at cryogenic temperatures. During the period 1983-1998, he taught courses on analog electronics and devices and conducted research on compact model design. He continued to work part-time on compact modeling of power semiconductor devices from 2000 to 2007.
ExtentApproximately 30 dated entries over 31 pages.
Dimensions12 x 10 inches
Collection TitleFairchild Semiconductor notebooks and technical papers
PublicationsThe author contributed to the following R&D Technical Reports (TR) and published papers during his service at Fairchild:
TR66 I/F and Low Frequency Shot Noise in Silicon Transistors (1962-02-09)
Lauritzen, P. Circuit control of microplasma switching in avalanche diodes. 1965 IEEE International Solid-State Circuits Conference: Digest of Technical Papers, vol. VIII (1965): 70-71.
Lauritzen, P.O. A "step recovery" switching transistor. 1965 International Electron Devices Meeting, vol. 11 (1965): 25.
Lauritzen, P. O. and Fitzgerald, D. J. Design tradeoffs for a neutron radiation-tolerant silicon transistor. IEEE Transactions on Nuclear Science, vol. 11, iss. 5 (1964): 39-46.
Lauritzen, P. and Leistiko, O., Jr. Field-effect transistors as low-noise amplifiers. 1962 IEEE International Solid-State Circuits Conference: Digest of Technical Papers, vol. V (1962): 62-63.
Lauritzen, P.O. and Sah, C.T. 1/f noise in surface potential controlled junctions. IRE Transactions on Electron Devices, vol. 9, iss. 6 (1962): 507.
Lauritzen, P.O. and Sah, C.T. Low-frequency recombination-generation noise in silicon FET's. IEEE Transactions on Electron Devices, vol. 10, iss. 5 (1963): 334-335.