Artifact Details


Lawrence patent notebook (#283)

Catalog Number





This volume describes work performed by the author in providing analytical services on silicon wafers to Fairchild R&D personnel and other operating units, using etching, polishing, cleaving, X-ray crystallography, and electron and optical microscopy tools. Each project is described in detail, including goals, procedures, results and an interpretation of the findings, together with numerous Polaroid photos of defects. Notable items in this volume include: experimental techniques used to investigate pipe defects and other related anomalous breakdown phenomena; review of pipe problem (pipes are tubes or impurity islands in the wafer) report stapled to page 17, and memo on the “Philosophy and itinerary for the pipe-related phenomena.”




Lawrence, John E.

Biographical Notes

John E. Lawrence joined Fairchild circa 1962 as a metallurgical scientist. In this role he provided semiconductor defect analysis, contamination tracking, and other analytical services to the R&D and operating units using a variety of crystallographic and other techniques. During his Fairchild career Lawrence published a minimum of 21 internal R&D Technical Reports (TR) and 7 technical papers in professional journals. On leaving Fairchild circa 1969 he provided similar services to other local companies including the following for which he is named as inventor on patents assigned to them: Silicon Materials Inc. in Mountain View (1974); Winchester Disc, Inc. in Milpitas (1984); EPRI in Palo Alto (1989); Lawrence Technology in Cupertino (1991); and Kobe Precision Inc. in Hayward (1994), all based in California.


Fairchild Semiconductor

Identifying Numbers

Document number 283


Approximately 70 dated entries over 151 pages.


12 x 10 inches


The author is named as inventor on 7 U.S patents. None of these are assigned to Fairchild.



Collection Title

Fairchild Semiconductor notebooks and technical papers


The author contributed to the following R&D Technical Reports (TR) and papers in professional publications during his service at Fairchild:

TR93 Silicon epitaxial (111) surface defects (1962-12-21).

TR149 Pipe and related phenomena; their categorization and methods of identification (1964-01-06).

TR160 The tripyramid and raised triangle (111) diamond lattice imperfections in silicon epitaxial films (1964-03-04).

TR163 The FD-series low breakdown producing defect (1964-03-16).
TR181 Tweezer metallic contamination on PNP and NPN devices (1964-07-10).

TR186 The physical nature of electrically active copper precipitates (1964-09-03).

TR191 Method for producing large Si films for preselected imperfection analysis (1964-11-04).

TR199 "Polymer residue" induced electrical defects (1965-01-25).

TR202 The electrical and gettering mechanism dependence on the structure of copper segregates (1965-01-29).

TR218 Diffusion induced surface stress and lattice disorders in silicon (1965-06-28).

TR243 The cooperative diffusion effect (1966-02-18).

TR253 The cooperative diffusion effect (1966-06-15).

TR266 Effect of defects and process abnormalities on FT-1312 (1966-09-07).

TR289 Gettering mechanisms - a literature study (1967-03-01).

TR303 Metallographic analysis of gettered silicon (1967-08-09).

TR322 An evaluation of solutions used to clean silicon wafers (1967-12-27).

TR327 On dislocations in silicon semiconductor devices (1968-01-22).

TR325 Cristoba1ite: its cause and prevention (1968-01-22).

TR348 Stacking faults in surfaces of annealed silicon (1968-08-27).

TR358 On oxygen in silicon: a preliminary study (1968-11-27).

TR362 New process design considerations – control emitter push effect and bulk contamination (1969-01-16).

*Lawrence, J.E. Behavior of dislocations in silicon semiconductor devices: diffusion, electrical. Journal of the Electrochemical Society, vol. 115, iss. 8 (1968): 860-865.

*Lawrence, J.E. The co-operative diffusion effect. Journal of Applied Physics, vol. 37, iss. 11 (1966): 4106.

*Lawrence, J.E. Diffusion-induced stress & lattice disorders in silicon. Journal of the Electrochemical Society, vol. 113, iss. 8 (1966): 819-824.

*Lawrence, J.E. Electrical properties of copper segregates in silicon p-n junctions. Journal of the Electrochemical Society, vol. 112, iss. 8 (1965): 796-800.

Lawrence, J.E. Metallographic analysis of gettered silicon. Transactions of The Metallurgical Society of AIME, vol. 242, (1968-03): 484-489.

*Lawrence, J.E. and Koehler, H. Method of producing large Si films for preselected imperfection analysis. Journal of Scientific Instruments, vol. 42, iss. 4 (1965): 270.

*Lawrence, J.E. and Tucker, R.N. Tri-pyrarnid & raised-triangle (III) diamond-lattice imperfections in silicon epitaxial films. Journal of Applied Physics, vol. 36, iss. 10 (1965): 3095.

* This paper is included in a three volume bound set of “Fairchild Research Published Technical Papers” assembled by Bruce Deal in 1988 (copy in the CHM Fairchild collection).


Gift of Texas Instruments Incorporated

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