Artifact Details


Learn patent notebook (#1249)

Catalog Number





This volume describes work on electromigration and other characteristics of aluminum films. Specific entries include; electromigration in anodized aluminum strips (pp. 1-2); pressure rate effects (pp. 3-4); electromigration in Al-Si films (pp. 6-7); in the presence of oxide steps (pp. 10-11); hillock formation (p. 15); layered Al films (pp. 20-22); electromigration in anodized Al metallization (pp. 33-35); and processing for optimizing Al alloy metallization (pp. 53-56).




Learn, Arthur J.

Biographical Notes

Arthur J. Learn received a Ph.D. in physics from MIT (1958). Prior to joining Fairchild circa 1970, where he focused on aluminum electromigration issues, he was employed at TRW Space Technology Laboratories in Redondo Beach, California, (circa 1963) and the NASA/Electronics Research Center, Cambridge, Massachusetts (circa 1968). He joined Intel in the mid-1970s and in the 1990s was associated with start-up display manufacturer Candescent Technologies, Inc.


Fairchild Semiconductor

Identifying Numbers

Document number 1249


Approximately 20 dated entries over 56 pages.


12 x 10 inches


The author is named as inventor on 26 U.S patents, including 1 patent assigned to Fairchild:

U.S. patent 3702427, “Electromigration resistant metallization for integrated circuits, structure and process.” Filed 1971-02-22. Issued 1972.



Collection Title

Fairchild Semiconductor notebooks and technical papers


The author contributed to the following R&D Technical Reports (TR) and conference papers during his service at Fairchild:

TR506 Reduction of electromigration-induced failure in aluminum metallization through anodization (1971-03-29).

TR507 Electromigration induced failure in aluminum metallization (1971-04-21).

TR521 Effect of redundant microstructure on electromigration induced failure (1971-06-28).

TR544 Effect of structure and processing on electromigration-induced failure in anodized aluminum (1972-08-07).

TR548 Aluminum alloy film deposition and characterization (1972-10-09).

TR553 Electromigration effects in aluminum alloy metallization (1973-02-08).

Learn, Arthur J. Effect of redundant microstructure on electromigration induced failure. Applied Physics Letters, vol. 19, iss. 8 (1971): 292-295.

Learn, Arthur J. Effect of structure and processing on electromigration induced failure in anodized aluminum. Journal of Applied Physics, vol. 44, iss. 3 (1973): 1251-1258.

Learn, A.J. and Hess, D.W. Effects of ion implantation on charges in the silicon–silicon dioxide system. Journal of Applied Physics, vol. 48, iss. 1 (1977): 308-312.


Gift of Texas Instruments Incorporated

Lot Number