TitleLeistiko patent notebook (#110)
DescriptionDescribes several experiments on the out-diffusion of aluminum in FET devices. Proposes mask geometry designs for a “pentode replacement” and other FET devices. [Note: A copy of “Project plan for project #189, field effect transistors” prepared by the author in mid-1961 is inserted into page 88 of Moore LN#2.] Notes an experiment to study “the drift problem of the SCT” – C.T. Sah’s surface controlled transistor. (p. 34). This is one of the earliest Fairchild references to the instability issues that would plague MOS devices for the rest of decade. A pasted-in typed page of the draft of TR 236 (below) (p. 39).
AuthorLeistiko, Otto, Jr.
Biographical NotesOtto Leistiko, Jr. was born in Omaha, Nebraska in 1931. He served with the U. S. Navy Air Force from 1950 to 1954. He received a B.S. degree (college unknown). From circa 1960 to 1966 he worked on diffusion and design of FET devices in the physics section of Fairchild R&D. He collaborated with C. T. Sah and Andy Grove as co-inventor of U.S. patent 3463977 (below). Circa 1966 he joined Hewlett Packard but his signature appears in the notebook Forsythe (551) with a 1971 date. He was later associated with the Technical University of Denmark.
ExtentApproximately 24 dated entries over 45 pages.
Dimensions12 x 10 inches
PatentsThe author is named as inventor on 3 U.S patents. All 3 patents are assigned to Fairchild:
U.S. patent 3335342, “Field-effect transistors.” Filed 1962-06-11. Issued 1967-08-08.
U.S. patent 318312, “Method of making field-effect transistors.” Filed 1962-06-11. Issued 1965-05-11.
U.S. patent 3463977, “Optimized double-ring semiconductor device.” Filed 1966-04-21. Issued 1969-08-26.
Collection TitleFairchild Semiconductor notebooks and technical papers
PublicationsThe author contributed to the following R&D Technical Reports (TR) and papers in professional publications during his service at Fairchild:
TR14 A lateral field photocell (1960-01-20).
TR155 Diffusion of gallium through a silicon dioxide layer (1964-02-14).
TR166 Redistribution of acceptor and donor impurities during thermal oxidation of silicon (1964-03-25).
TR236 Breakdown voltage of planar silicon diodes (1965-12-07).
TR257 Effect of surface fields on the breakdown voltage of planar silicon P-N junctions (1966-07-22) .
Grove, A.S., Leistiko, O. Jr. and Hooper, W.W. Effect of surface fields on the breakdown voltage of planar silicon p-n junctions, IEEE Transactions on Electron Devices, vol. 14, iss. 3 (1967): 157-162.
Lauritzen, P. and Leistiko, O., Jr. Field-effect transistors as low-noise amplifiers. 1962 IEEE International Solid-State Circuits Conference: Digest of Technical Papers, vol. V (1962): 62-62.
Leistiko, O., Jr., Grove, A.S. and Sah, C.T. Electron and hole mobilities in inversion layers on thermally oxidized silicon surfaces. IEEE Transactions on Electron Devices, vol. 12, iss. 5 (1965): 248-254.