Leistiko patent notebook (#110)
Describes several experiments on the out-diffusion of aluminum in FET devices. Proposes mask geometry designs for a “pentode replacement” and other FET devices. [Note: A copy of “Project plan for project #189, field effect transistors” prepared by the author in mid-1961 is inserted into page 88 of Moore LN#2.] Notes an experiment to study “the drift problem of the SCT” – C.T. Sah’s surface controlled transistor. (p. 34). This is one of the earliest Fairchild references to the instability issues that would plague MOS devices for the rest of decade. A pasted-in typed page of the draft of TR 236 (below) (p. 39).
Item Details
- Date
- 1961-02-15-1965-08-19 (Made)
- Type
- Document
- Catalogue number
- 102722993
- Other identifying number
- 110 (Document Number)
- Organization
- Fairchild Semiconductor (Publisher)
- People
- Jr. Leistiko (Author)
- Category
- Notebooks
- Credit line
- Gift of Texas Instruments Incorporated
- Extent
- Approximately 24 dated entries over 45 pages.
- Language
- English
- Acquisition number
- X6464.2012
- Archive collection
- Fairchild Semiconductor notebooks and technical papers
- Archive hierarchy
- Fairchild Semiconductor notebooks and technical papers