Artifact Details


Ruegg patent notebook (#198)

Catalog Number





This volume contains calculated and experimental verification of thermal and voltage breakdown characteristics of DCTL Micrologic devices; analysis of DCTL, DTL and TTL as alternate possible circuit configurations for Micrologic II (p. 33); summary of work on differential amplifier (p. 41); voltage controlled SCR (p. 58) witnessed by P. Lamond; methods of realizing FET and transistors in a single chip (p. 66); analogue FET switch with pnp driver (p. 72); scheme for isolating npn and pnp transistors (pg. 87); and read-type diodes (p. 127). Notes on invention disclosures loose at end of book.




Ruegg, Heinz W.

Biographical Notes

Heinz W. Ruegg was born in Zurich, Switzerland, in 1935. He received the Diploma in Electrical Engineering from the Swiss Federal Institute of Technology, Zurich (1959), the M.S. degree from the California Institute of Technology in Pasadena (1961) and the Ph.D. degree from Stanford University in Stanford, California (1966). From 1960 to 1961 he was a Graduate Research Assistant at the California Institute of Technology, working on thin magnetic films. In 1961 he joined Fairchild Semiconductor in Palo Alto, California, and worked on the characterization of Micrologic. With R.H. Beeson he co-authored the 1962 ISSCC paper “New forms of all-transistor logic” that included one of the first published diagrams of the Transistor Transistor Logic (TTL) circuit that formed the workhorse digital IC family of the 1970s. In 1962 he led the development of linear integrated circuits and performed exploratory research on solid-state microwave devices. A 1966 organization chart shows him as a Member of the Technical Staff in the Exploratory Devices Section of the Solid State Physics Department reporting to C. Bittmann. He joined Faselec AG in Zurich, Switzerland, to work on low power circuits for watches in 1967.


Fairchild Semiconductor

Identifying Numbers

Document number 198


Approximately 43 dated entries over 152 pages.


12 x 10 inches



Collection Title

Fairchild Semiconductor notebooks and technical papers


The author contributed to the following R&D Technical Reports (TR) and papers in professional publications during his service at Fairchild:

TR120 Vacuum deposited nichrome films (1963-05-24).

TR178 An unstable chopper transistor or an adaptive element? (1964-05-26).

TR231 The inductance MOST (1965-11-01).

TR286 A punch-through, microwave, negative-resistance diode (1967-02-17).

Beeson, R. and Ruegg, H. New forms of all-transistor logic. 1962 IEEE International Solid-State Circuits Conference: Digest of Technical Papers, vol. V (1962): 10-11.

Rodriguez, V., Ruegg, H. and Nicolet, M. A. Measurement of the drift velocity of holes in silicon at high-field strengths. IEEE Transactions on Electron Devices, vol. 14, iss. 1 (1967): 44-46.

Ruegg, H.W. A fast, high-gain silicon photodiode. 1966 IEEE International Solid-State Circuits Conference: Digest of Technical Papers, vol. IX (1966): 56-57

Ruegg, H.W. An integrated analog switch. 1964 IEEE International Solid-State Circuits Conference: Digest of Technical Papers, vol. VII (1964): 50-51.

Ruegg, H.W. An integrated FET analog switch. Proceedings of the IEEE, vol. 52, iss. 12 (1964): 1572-1575.

Ruegg, H.W. An optimized avalanche photodiode. IEEE Transactions on Electron Devices, vol. 14, iss. 5 (1967): 239-251.

Ruegg, H.W. A proposed punch-through microwave negative-resistance diode. IEEE Transactions on Electron Devices, vol. 15, iss. 8 (1968): 577-585.


Gift of Texas Instruments Incorporated

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