TitleSaxena patent notebook (#254)
DescriptionMetal Base Transistor program summary (p. 1). Hot electron diode (HED) process described (p. 8); and method for making GaAs LEDs (p.16).
AuthorSaxena, Arjun N.
Biographical NotesArjun Nath Saxena was born in India and worked at the Indian Institute of Nuclear Physics. He received a Ph.D. degree in Physics from Stanford University and joined Fairchild circa 1960, initially reporting to David James, where he worked on epitaxial silicon growth techniques and later tunnel diodes. He moved to the Sprague Electric Company, located in North Adams, Massachusetts, circa 1965 and then went to RCA Labs, located in Princeton, New Jersey, both in semiconductor research roles. He retired as a professor in the Electrical, Computer, and Systems engineering Department at Rensselaer Polytechnic Institute in 1997. He served as the Consulting Editor of a book series on Microelectronics Manufacturing and has written the book “Invention of Integrated Circuits: Untold Important Facts.”
Extent12 dated entries over 18 pages.
Dimensions12 x 10 inches
PatentsThe author is named as inventor on 4 U.S patents. No patents are assigned to Fairchild.
Collection TitleFairchild Semiconductor notebooks and technical papers
PublicationsThe author contributed to the following R&D Technical Reports (TR) and papers in professional publications during his service at Fairchild:
TR67 Epitaxial silicon films (1962-02-12).
TR122 Optical constants and thickness determination with an ellipsometer (1963-06-14).
TR144 Examination and evaluation of Hewlett Packard Associates hot electron diodes (1963-10-21).
TR200 Changes in the phase and amplitude of polarized light reflected from a film-covered surface and their relations with the film thickness (circa 1965).
TR221 A versatile electron microscope reflection stage and its applications (1965-01-29).
TR222 The electrical and gettering mechanism dependence on the structure of copper segregates (1965-01-29).
Saxena, A. N., Changes in the phase & amplitude of polarized light reflected from a film-covered surface. Journal of the Optical Society of America, vol. 55, no. 9 (1965-09): 1061-1067.
Saxena, A. N., Use of an ellipsometer to determine surface cleanliness and measurement of the optical and dielectric constants of InSb at λ = 5461 Å. Applied Physics Letters, vol. 7, iss. 5 (1965): 113-114.