TitleSchmidt patent notebook (#290)
DescriptionDescribes the design and testing of a discrete transistor sense amplifier (p. 1) for use with a thin film memory; fabrication of wire memories (p.33); testing of P-MOS devices for use in a memory array (p. 65); design of MOS memory decoders (p. 74); memory element power considerations (p. 80); MOS counter designs (p.84); breadboard testing of a bipolar semiconductor memory cell (p. 121); and testing of SC (semiconductor) memory (p. 132).
AuthorSchmidt, Jack (John) D.
Biographical NotesJohn (Jack) D. Schmidt joined Fairchild from the General Electric Research Laboratory in Sunnyvale, California, to work on the application of semiconductors in memory system applications in 1963. He designed discrete transistor sense and driver circuits for thin film and core memories and was involved in the design and testing of the company’s first bipolar and MOS semiconductor memory devices. Schmidt was a project engineer in a group of five technical personnel that was spun out under Harley Perkins as a group in 1965 as the Fairchild Memory Products division. He worked with Jon M. Schroeder to attach 16 of memory chips to a ceramic substrate to form a 1024-bit hybrid memory product called Semiconductor Advanced Memory (SAM). After the Memory Products division was closed he was listed on the R&D Professional Staff organizational chart in 1968 as Head of the Semiconductor Active Memory Section of the Physics Department reporting to C. Bittman. Together with Schroeder he co-founded Computer Microtechnology Inc. (CMI) in 1968 to build memory products.
ExtentApproximately 50 dated entries over 145 pages.
Dimensions12 x 10 inches
Collection TitleFairchild Semiconductor notebooks and technical papers
PublicationsThe author contributed to the following R&D Technical Reports (TR) and papers in professional publications during his service at Fairchild:
TR141 Thin magnetic film, dynamic tester (1963-10-21).
TR319 SAM multi-chip package development (1967-12-12).
Perkins, H. A. and Schmidt, J. D. An integrated semiconductor memory system
Fall Joint Computer Conference: AFIPS Proceedings, vol. 27 (1965-11): 1053-1064.
Schmidt, J. D. Integrated MOS transistor random access memory. Solid State Design, vol. 6, no. 1 (1965-01): 21-25.