Artifact Details

Description

This author used this volume exclusively for invention disclosures. All but one entry is formally Read and Understood. Examples include: "Reduction in surface recombination density", which relates to U.S. patent 3513035 (pp. 10-11); "High gain lateral pnp transistor" (pp. 22-23); and "Properties of gold doped MOS transistor", which relates to TR297 (pp. 12-13).

Date

1965-10-25-1969-04-09

Author

Snow, Edward H.

Biographical Notes

Edward H. Snow graduated from Dixie State College, located in St. George, Utah, in 1956 and received a Ph.D. in solid state physics from the University of Utah. He joined the Fairchild Semiconductor R&D Laboratory, located in Palo Alto in 1963. A 1966 R & D organization chart shows him as a Member of Technical Staff in the Surfaces-Device Theory section reporting to A. Grove. Together with Bruce Deal, Andy Grove, and C.T. Sah, he was an important contributor to the early understanding of the properties of metal-oxide-semiconductor (MOS) structures. He is credited with identifying sodium introduced by the heated tungsten filament used for electron beam aluminum evaporation as the major source of contamination. Ed Snow left in 1971 to co-found imaging company Reticon with Gene Weckler and John Rado where he served as Vice President until 1977.

Publisher

Fairchild Semiconductor

Identifying Numbers

Document number

302

Extent

Approximately 11 dated entries over 23 pages.

Dimensions

12 x 10 inches

Patents

The author is named as inventor on 5 U.S patents, including 3 patents assigned to Fairchild:

U.S. patent 3513035, “Semiconductor device process for reducing surface recombination velocity.” Filed 1976-11-01. Issued 1970-05-19

U.S. patent 3571674, “Fast switching PNP transistor.” Filed 1969-01-10. Issued 1971-03-23.

U.S. patent 3728590, “Charge coupled devices with continuous resistor electrode.” Filed 1971-04-21. Issued 1973.

Category

Notebooks

Collection Title

Fairchild Semiconductor notebooks and technical papers

Publications

The author contributed to the following R&D Technical Reports (TR) and conference papers during his service at Fairchild

TR177 Investigation of thermally oxidized silicon surfaces using metal-oxide-semiconductor structures [1964-05-25].

TR190 Ion transport phenomena in insulating films [1964-10-11].

TR225 Space charge polarization in glass films [1965-08-13].

TR227 Polarization phenomena and other properties of phosphosilicate glass films on silicon [1965-09-15].

TR244 Properties of the silicon-dioxide-silicon system [1966-02-16].

TR246 MOS Characteristics for gallium arsenide [1966-04-07].

TR250 Barrier energies in metal-silicon dioxide-silicon structures [1966-04-29].

TR261 Characteristics of the surface-state charge (Qss) of thermally oxidized silicon [1966-08-11].

TR272 Tunnel currents in Si02 films [1966-11-04].

TR282 Effects of ionizing radiation on oxidized silicon surfaces and planar devices [1967-02-10].

TR285 Charge migration on oxidized silicon surfaces and its effect on p-n junction characteristics [1967-02-15].

TR297 Properties of gold doped MOS structures [1967-05-16].

TR308 Polarization effects in insulating films on silicon - a review [1967-10-23].

TR309 Comparison of surface and bulk effects of nuclear reactor radiation on planar devices [1967-10-16].

TR326 Surface effects on metal-silicon contacts [1968-01-24].

TR352 Minority carrier injection of metal-silicon contacts [1968-07-10].

Fitzgerald, D.J. and Snow, E.H. Comparison of surface and bulk effects of nuclear reactor radiation on planar devices. IEEE Transactions on Electron Devices, vol. 15, iss. 3 (1968): 160-163.

Grove, A.S.; Deal, B.E.; Snow, E.H.; Sah, C.T. Investigation of thermally oxidized silicon surfaces using metal-oxide-semiconductor structures. IEEE Transactions on Electron Devices, vol. 11, vol. 11 (1964): 531.

Grove, A.S. and Snow, E.H. A model for radiation damage in metal-oxide-semiconductor structures. Proceedings of the IEEE, vol. 54, iss. 6 (1966): 894-895.

Grove, A. S., Snow, E. H., Deal, B. E. and Sah, C. T. Simple physical model for the space charge capacitance of metal-oxide semiconductor structures. Journal of Applied Physics, vol. 35, iss. 8 (1964): 2458-2460.

Kim, Choong?Ki and Snow, E. H. P?Channel charge?coupled devices with resistive gate structure. Applied Physics Letters, vol. 20, iss. 12 (1972): 514-516.

Lenzlinger, M. and Snow, E. H. Fowler?Nordheim tunneling into thermally grown SiO2. Journal of Applied Physics, vol. 40, iss. 1 (1969): 278-283.

Mead, C. A., Snow, E. H. and Deal, B. E. Barrier lowering and field penetration at metal?dielectric interfaces. Applied Physics Letters, vol. 9, iss. 1 (1966): 53-55.

Snow, E.H. Current status of self scanning photodiode array technology. 1977 International Electron Devices Meeting, vol. 23 (1977): 537.

Snow, E.H. Ion migration and space-charge polarization in glass films. IEEE Transactions on Electron Devices, vol. 12, iss. 9 (1965): 503-504.

Snow, E.H., Deal, B.E. and Mead, C.A. Barrier energies in MOS structures. IEEE Transactions on Electron Devices, vol. 13, iss. 8/9 (1966): 674.

Snow, E. H. and Dumesnil, M. E. Space-charge polarization in glass films, Journal of Applied Physics, Vol. 37, Iss. 5 (1966): 2123-2131.

Snow, E. H. and Gibbs, P. Dielectric loss due to impurity cation migration in ? quartz. Journal of Applied Physics, vol. 35, iss. 8 (1964): 2368-2374.

Snow, E. H., Grove, A. S., Deal, B. E. and Sah, C. T. Ion transport phenomena in insulating films, Journal of Applied Physics, vol. 36, iss. 5 (1965): 1664-1673

Snow, E.H., Grove, A.S. and Fitzgerald, D.J. Creation of fast surface states by ionizing radiation. IEEE Transactions on Electron Devices, vol. 14, iss. 9 (1967): 630

Snow, E.H., Grove, A.S. and Fitzgerald, D.J. Effects of ionizing radiation on oxidized silicon surfaces and planar devices. Proceedings of the IEEE, vol. 55 , iss. 7 (1967): 1168-1185.

Yu, A. Y. C. and Snow, E. H. Radiation effects on silicon Schottky barriers. IEEE Transactions on Nuclear Science, vol. 16, iss. 6 (1969): 220-226.

Yu, A. Y. C. and Snow, E. H. Surface effects on metal silicon contacts. Journal of Applied Physics, vol. 39, iss. 7 (1968): 3008-3016.

Credit

Gift of Texas Instruments Incorporated

Lot Number

X6464.2012