Artifact Details


Tremere patent notebook (#177)

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Inside front cover note says, “Surface Potential Controlled Devices and FET (Gallium Arsenide)”. Describes process flow and mask sequences of wafer runs of SPCT devices (pp. 1-25); measuring switching time of SCT for C. T. Sah’s patent application (pp. 25-27); GaAs research (pp. 32-34); and improving GaAs FET performance (pp. 40-44).




Tremere, Douglas A.

Biographical Notes

Douglas A. Tremere was born in Sioux Falls, South Dakota, in 1932. He received a B.Sc. in chemistry from the South Dakota School of Mines and Technology in Rapid City, South Dakota (1954). He joined Shockley Semiconductor in 1958 and Fairchild Semiconductor in 1959 where he worked on new transistor wafer processing and GaAs research projects . A 1966 organization chart shows him as a Senior Engineer in the Exploratory Devices Section managed by C. Bittmann. From 1970 to 1972 he worked on MOS IC development at Qualidyne Corp. He joined Westinghouse Research Laboratories in 1972.


Fairchild Semiconductor

Identifying Numbers

Document number 177


Approximately 24 dated entries on 46 pages. Many undated.


12 x 10 inches


One U.S. patent identified which is assigned to Fairchild:

U.S. Patent 3338758, “Surface gradient protected high breakdown junctions.” Filed 1964-12-31. Issued 1967-08-29.



Collection Title

Fairchild Semiconductor notebooks and technical papers


The author contributed to the following R&D Technical Reports (TR) and papers in professional publications during his service at Fairchild:

TR21 Silicon tunnel diodes - experimental techniques and data (1960-05-01).

TR85 Current-voltage characteristics of surface controlled layers (1962-09-20).

TR136 A bibliography on gallium arsenide (1963-10-01).

TR298 Current gain and cutoff frequency falloff at high currents (1967-06-14).

TR434 A semi-open-tube diffusion into gallium arsenide (1969-10-24).

Bogert, H., Sah, C. and Tremere, D. Applications of the surface potential controlled transistor tetrodes. 1962 IEEE International Solid-State Circuits Conference: Digest of Technical Papers, vol. V (1962): 34-35.

* Whittier, R.J. and Tremere, D.A. Current gain and cutoff frequency falloff at high currents. IEEE Transactions on Electron Devices, vol. 16, iss. 1 (1969): 39-57.

* This paper is included in a three volume bound set of “Fairchild Research Published Technical Papers” assembled by Bruce Deal in 1988 (copy in the CHM Fairchild collection).


Gift of Texas Instruments Incorporated

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