Roberts patent notebook (#7)
This volume opens with one of the first entries written by any of the founders, a description of the plan the author has developed to establish a silicon crystal growing capability in the 844 Charleston Road building, including the features of the ingot puller he has designed. Notes on the growth of the first crystal on 1958-01-15 (p. 6). The material was cut up and given to Moore/Allison for “Project 100”. A total of 15 starts resulted in 6 usable single crystal ingots (p. 9). Succeeding pages are densely filled with detailed day-by-day accounts of his progress and issues together with (many loose) Polaroid photos of etched wafers and numerous results of resistivity measurements. Describes possible uses and issues with “aluminum pull-away” from silicon surface (pp. 23 - 25). Suggests that the presence of oxygen “is of more than incidental interest” on the bulk properties of silicon (p. 35), cites many references. Design calculations for NPIN transistor (p. 42). Experiments on neutron irradiation of NPN transistors to lower storage time (pp. 47-48). “Thoughts on contact alloying to diffused silicon transistors” (pp. 57-58). This is 1 of 2 books issued to the author. The other book is Roberts (Un-numbered).
Item Details
- Date
- 1957-10-21-1961-01-27 (Made)
- Type
- Document
- Catalogue number
- 102723920
- Other identifying number
- 7 (Document Number)
- Organization
- Fairchild Semiconductor Corporation (Publisher)
- People
- C. Sheldon Roberts (Author)
- Category
- Notebooks
- Credit line
- Gift of Texas Instruments Incorporated
- Extent
- Approximately 145 dated entries over 93 pages.
- Language
- English
- Acquisition number
- X6464.2012
- Archive collection
- Fairchild Semiconductor notebooks and technical papers
- Archive hierarchy
- Fairchild Semiconductor notebooks and technical papers