Kamins patent notebook (#1095)
Describes the evaluation of polycrystalline silicon grown under a wide variety of process conditions, accompanied by numerous SEM images of the results. Work for U.S. patent 3611067, below (p. 76); Description of the method for "TR512 Diffusion of impurities into polycrystalline silicon" (p. 123); basis for the 1972 paper “A new dielectric isolation technique” (p. 145).
Item Details
- Date
- 1969-06-30-1971-02-11 (Made)
- Type
- Document
- Catalogue number
- 102723934
- Other identifying number
- 1095 (Document Number)
- Organization
- Fairchild Semiconductor (Publisher)
- People
- Theodore I. Kamins (Author)
- Category
- Notebooks
- Credit line
- Gift of Texas Instruments Incorporated
- Extent
- Approximately 3 dated entries over 152 pages.
- Language
- English
- Acquisition number
- X6464.2012
- Archive collection
- Fairchild Semiconductor notebooks and technical papers
- Archive hierarchy
- Fairchild Semiconductor notebooks and technical papers