TitleFrohman patent notebook (#439)
DescriptionCircuit schematics for analysis of MOS device performance under capacitive loads for TR299, below. An idea for a 4-terminal MOS transistor. An invention note for “An integrated MNOS memory” issued as U.S. patent 3641512, below (p. 9).
Biographical NotesDov Frohman-Bentchkowsky was born to Polish Jewish refugees in Amsterdam, Holland, in 1939. He was raised in hiding during the war and emigrated to Israel in 1949. He received a B.Sc. degree in electrical engineering in 1963 from the Israeli Institute of Technology, Haifa, and an M.S. and Ph.D. from University of California, Berkeley. Frohman joined the Fairchild Semiconductor, R&D Laboratory, located in Palo Alto in 1965. A 1966 organization chart lists him as an Engineer B reporting to R. Fogelsong, head of the Circuits and Development Technology Section of the Digital Integrated Electronics Department, led by R. Seeds. In 1968 he reported to L. Vadasz in a new MOS Circuit and Device Technology Dept. He joined Intel Corporation in 1969 where he developed Intel’s first EPROM in 1970. He returned to Israel in 1974 where he established a design center and taught at Hebrew University. In 1985 Frohman was appointed general manger of Intel Israel and remained until his retirement in 2001.
Extent4 dated entries over 11 pages.
Dimensions12 x 10 inches
PatentsThe author is named as inventor on 7 U.S patents, including 1 patent assigned to Fairchild:
U.S. patent 3641512, “Integrated MNOS memory organization.” Filed 1970-04-06. Issued 1972-12-30.
Collection TitleFairchild Semiconductor notebooks and technical papers
PublicationsThe author contributed to the following R&D Technical Reports (TR) and papers in professional publications during his service at Fairchild:
TR 299 MOS device characterization (1967-05-31).
TR 359 Computer aided design and characterization of digital MOS integrated circuits (1968-10-11).
TR387 Charge transport and storage in metal nitride-oxide-silicon (MNOS) structures (1969-02-12).
TR 410 Integration of metal-nitride-oxide semiconductor (MNOS) transistors for nonvolatile storage arrays (1969-04-16).
TR 430 The metal-nitride-oxide-silicon (MNOS) transistor characteristics and applications (1969-11-24).
TR 449 The Si3N4-SiO2 interface charge in MNOS structures (1969-12-19).
Frohman-Bentchkowsky, D. and Grove, A. S., Conductance of MOS transistors in saturation. IEEE Transactions on Electron Devices, vol. 15, iss. 6 (1968): 411.
Frohman-Bentchkowsky, D., The metal-nitride-oxide-silicon (MNOS) transistor—Characteristics and applications. Proceedings of the IEEE, vol. 58, iss. 8 (1970): 1207-1219.
Frohman-Bentchkowsky, D. and Vadasz, L., DC analysis of an MOS source follower. IEEE Journal of Solid-State Circuits, vol. 3, iss. 3 (1968): 306-307.
Frohman-Bentchkowsky, D. and Forsythe, D. D., Reliability of MNOS integrated circuits. 1969 International Electron Devices Meeting, vol. 15 (1969): 48.
Frohman-Bentchkowsky, D., On the effect of mobility variation on MOS device characteristics. Proceedings of the IEEE, vol. 56, iss. 2, (1968) 217-218.
Frohman-Bentchkowsky, D., An integrated metal-nitride-oxide-silicon (MNOS) memory. Proceedings of the IEEE, vol. 57, iss. 6 (1969): 1190-1192.
Frohman-Bentchkowsky, D. and Vadasz, L., Computer-aided design and characterization of MOS integrated circuits. 1968 IEEE International Solid-State Circuits Conference: Digest of Technical Papers, vol. XI (1968): 68-69.
Klein, T., Kauffman, W. L., Hurlston, R. E., Jones, B. L. and Frohman, D., Manufacturing methods for integrated circuits using MOS transistors. The Defense Technical Information Center (1969-01): Accession number: AD0850892.