TitleSansbury patent notebook (#1331)
DescriptionTwo entries: “Bulk Conduction in MOS device through ion implantation” (p. 1), and “Nitride masking of polycrystalline silicon for Si-gate MOS” (p. 3).
AuthorSansbury, James D.
Biographical NotesJames (Jim) D. Sansbury received B.S., M.S., and Ph.D. Degrees in Electrical Engineering from Stanford University. He joined Fairchild circa 1971 where he worked on MOS processing technology. He was employed by Hewlett-Packard from 1975 to 1983 where he managed production and engineering of MOS wafer fabrication. He cofounded programmable logic manufacturer Altera Corporation in 1983 where he served as Vice President of Technology. He cofounded Invox Technology Inc., located in Campbell, Califonia, in 1996.
Extent2 dated entries over 7 pages.
Dimensions12 x 10 inches
PatentsThe author is named as inventor on more than 30 U.S patents. None are assigned to Fairchild
Collection TitleFairchild Semiconductor notebooks and technical papers
PublicationsThe author contributed to the following R&D Technical Reports (TR) and papers in professional publications during his service at Fairchild:
TR522 Threshold voltage reduction of MOST by ion implantation: effects of implantation layer depth (1971-07-06).
TR550 Channeling & dechanneling of ion implanted phosphorus in silicon (1973-01-10).
Sansbury, J.D. MOS field threshold increase by phosphorus-implanted field. IEEE Transactions on Electron Devices, vol. 20, iss. 5 (1973): 473 – 476.
Reddi, V. G. K. and Sansbury, J. D. Channeling and dechanelling of ion-implanted phosphorus in silicon. Journal of Applied Physics, vol. 44, iss. 7 (1973): 2951 – 2963.
Reddi, V.G.K. and Sansbury, J.D. Profiles of ion-implanted phosphorus in silicon: channeling and dechanneling. 1971 International Electron Devices Meeting, vol. 17 (1971): 132 .
Reddi, V. G. K. and Sansbury, J. D. Channeling of phosphorous ions in silicon. Applied Physics Letters, vol. 20, iss. 1 (1972): 30-31.