Moore patent notebook (L.N.#3)
As with earlier books, this volume contains notes made in preparation for and during routine meetings (staff, R&D project status, etc.) and meetings to discuss customer opportunities and specific production and research problems. Most meetings include an attendee list. Many internal memos and reports related to the topics under discussion are stapled or loosely inserted into the appropriate meeting pages. Key topics covered include epitaxial process status, project ROBE (Resistive Oxidative Backside Etched), mask making technology, and thin film resistors. Pages 138-139 records the first discussions of work by Deal, Grove, and Sah on the silicon to silicon dioxide interface “channel phenomena” that dominated the MOS business in later years. He notes frustration with the lack of direction concerning future IC products – “As far as I can see this whole area of digital integrated circuitry is badly up in the air.” This is one of 5 notebooks by Moore in the collection. The other 4 books by Moore are designated 6, LN#1, LN#2, and LN#4. Note that volumes LN#1 and LN#2 are labeled in reverse chronological order; LN#2 covers an earlier period than LN#1. Also there is gap of 2 years between LN#3 (ends 1963) and LN#4 (begins 1965).
Item Details
- Date
- 1962-11-15-1963-06-06 (Made)
- Type
- Document
- Catalogue number
- 102723965
- Other identifying number
- L.N.#3 (Document Number)
- Organization
- Fairchild Semiconductor (Publisher)
- People
- Gordon E. Moore (Author)
- Category
- Notebooks
- Credit line
- Gift of Texas Instruments Incorporated
- Extent
- Approximately 90 dated entries over 147 pages.
- Language
- English
- Acquisition number
- X6464.2012
- Archive collection
- Fairchild Semiconductor notebooks and technical papers
- Archive hierarchy
- Fairchild Semiconductor notebooks and technical papers