Mimura, Takashi oral history
Mimura was born in Osaka in 1944. His father was a fashion designer and managed a small sewing factory. As a boy, Mimura was interested in natural science, but did not develop an interest in engineering until later. He studied physics as an undergraduate and studied solid state physics in graduate school at Osaka University. Upon graduation in 1970, he joined Fujitsu, where he continued research work in semiconductors. In 1975, he was assigned to Fujitsu Laboratories in Kawasaki. While there, he was given the job to find higher performance semiconductor devices for Fujitsu’s computer group. To meet this need Mimura was investigating GaAs semiconductors as they had much higher performance than silicon. However, the greatest accomplishment of Mimura-san was the development of a new type of transistor, the HEMT FET. This is an important device which has been used widely used in high power, high frequency applications like satellite broadcast receivers.
Item Details
- Date
- 2016-06-20 (Made)
- Type
- Document
- Catalogue number
- 102738169
- Organization
- Computer History Museum (Publisher)
- People
- Takashi Mimura (Interviewee)
Douglas Fairbairn (Interviewer) - Category
- Transcript
- Format
- Credit line
- Computer History Museum
- Extent
- 11 p.
- Place of publication
- Japan/Tokyo
- Language
- English
- Acquisition number
- X7646.2016
- Subject
- Gallium Arsenide, Fujitsu
- Archive collection
- CHM Oral History Collection
- Archive hierarchy
- Oral History collection