Title
Masuhara, Toshiaki oral historyCatalog Number
102738173Type
DocumentDescription
Dr. Masuhara was born in Osaka, Japan in 1945. He obtained a BS, MS, and PhD in electrical engineering from Kyoto University in 1967, 1969 and 1977 respectively. His dissertation dealt with low-power MOS semiconductor devices.He worked at Hitachi’s Central Research Lab (CRL) from 1969 to 1991, where among other activities, he developed a 2Kb nMOS read-only memory. He also developed a new and more complete model of MOS transistors, including sub-threshold current, and published a related paper in 1974.
In 1974-1975, he attended UC Berkeley and worked with several key professors on MOS related topics. He returned to CRL in 1975, where his most important contribution was to help develop a high speed CMOS SRAM in 1977. His work on higher density SRAMs as large as 4MB led Hitachi to be the largest supplier of CMOS SRAMs.
He later became manager of several different departments within Hitachi, including those dealing with DRAMs, microprocessors, analog integrated circuits, and several other technologies. In 1993-1997, he became General Manager of the Technology Development Center. Later in his career, he headed multi-corporate programs to push the leading edge of semiconductor technology.
Date
2016-06-21Contributor
| Fairbairn, Doug, interviewer |
| Masuhara, Toshiaki, interviewee |
