TitleCastro patent notebook (#625)
AuthorCastro, P. (Pat) L.
Biographical NotesP. (Pat) L. Castro worked at Fairchild from circa 1966 to 1973. A 1968 organization chart shows her in the Contact Technology section of the Materials and Processes Department reporting to I. Blech. Most of the work described in these volumes and the resulting publications was performed under the supervision of B. Deal who at that time was Section head of Dielectric Films. From 1972-11 until her resignation in 1973-05, Castro documented to work of an R&D team working together with Mountain View production personnel in transferring a Philips CMOS process to Fairchild.
ExtentApproximately 37 dated entries over 149 pages.
Dimensions12 x 10 inches
DescriptionThis volume contains weekly memos written by Castro on the status and support work involved in transferring the Philips, Holland CMOS process to Fairchild. Following her resignation in 1973-05, the reports are continued by T. Kamins. The reports include personnel responsibilities, equipment requirements, mask and process specifications and complexities involved in establishing a process developed with different equipment, in a different corporate and social environment. Castro’s resignation is noted on page 64. A plan to introduce the first products in 1973-11 is noted on page 115. Kamins’ important contribution to the task is noted by B. Deal on page 149.
Collection TitleFairchild Semiconductor notebooks and technical papers
PublicationsThe author contributed to the following R&D Technical Reports (TR) and papers in professional publications during his service at Fairchild:
TR 304 Process effects on fast surface states of thermally oxidized silicon I. annealing at temperatures of 920°C or below (1967-08-31).
TR306 Electrical properties of vapor deposited silicon nitride and silicon oxide films on silicon (1967-09-05).
TR331 Preliminary investigation of nickel gettering (196-02-06).
TR371 Stresses in thin films of aluminum (1968-11-08).
TR378 Characteristics of fast surface states associated with Si02 and Si3N4-Si02-Si
TR410 Some observations regarding the relationship between bulk dislocation and
gettering in silicon (1969-06-11).
TR476 Low temperature reduction of fast surface states associated with thermally oxidized silicon (1970-06-22).
*Castro, P.L. and Deal, B.E. Low temperature reduction of fast surface states associated with thermally oxidized silicon. Journal of the Electrochemical Society, vol. 118, iss. 2 (1971): 280-286.
Deal, B.E., Fleming, P.J., and Castro, P.L. Electrical properties of vapor deposited silicon nitride and silicon oxide films on silicon. Journal of the Electrochemical Society, vol. 115, iss. 3 (1968): 300-307.
Deal, B.E., MaKenna, E., and Castro, P.L. Characteristics of fast surface states associated with SiO2-Si and Si3N4-SiO2-Si structures. Journal of the Electrochemical Society, vol. 116 (1969): 997-1005.
* This paper is included in a three volume bound set of “Fairchild Research Published Technical Papers” assembled by Bruce Deal in 1988 (copy in the CHM Fairchild collection).