TitleChou laboratory notebook (Ion Implantation System II)
Biographical NotesSunlin Chou was born in Singapore and received B.S., M.S., and E.E. degrees from MIT in 1966, 1967, and 1968 respectively, all in electrical engineering. He joined Fairchild in 1968 where he worked on the development of a lateral PNP transistor and was involved in the set-up and operation of an ion implantation system while also earning a Ph.D. from Stanford University (1971). He moved to Intel Corporation in 1971, and worked on device modeling, memory design, and process development projects, before assuming responsibility for Intel’s DRAM process technology development effort. He was senior vice president and general manager of Intel’s Technology and Manufacturing Group when he retired in 2005. He was awarded the IEEE Robert Noyce Award in 2013.
ExtentOne dated entry over 5 pages.
Dimensions10 x 8 inches
DescriptionThis is Volume II of two notebooks recording the set up of the ion implantation system. It consists of brief notes made during a visit to Ion Equipment Corp. in Santa Clara.
Collection TitleFairchild Semiconductor notebooks and technical papers
PublicationsThe author contributed to the following R&D Technical Reports (TR) and papers in professional publications during his service at Fairchild:
TR430 An investigation of lateral transistors I. DC characteristics [1968-9-10-06].
TR446 On the measurement of recombination currents in epitaxial base transistors [1969-12-12].
TR464 A study of diffused layers of arsenic and antimony in silicon using the ion scattering technique [1970-05-22].
TR504 An investigation of lateral transistors II - small signal characteristics [1971-03-26].
*S. Chou. An investigation of lateral transistors - D.C. characteristics . Solid-State Electronics, vol. 14, iss. 9 (1971-09): 811–826.
*S. Chou. Small-signal characteristics of lateral transistors . Solid-State Electronics, vol. 15, iss. 1 (1972-01): 27–38.
*S. Chou, L. A. Davidson, and J. F. Gibbons. A study of diffused layers of arsenic and antimony in silicon using the ion-scattering technique. Applied Physics Letters, vol. 17, iss. 1 (1970-07): 23.
* This paper is included in a three volume bound set of “Fairchild Research Published Technical Papers” assembled by Bruce Deal in 1988 (copy in the CHM Fairchild collection).