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Leistiko patent notebook (#110)






Leistiko, Otto, Jr.

Biographical Notes

Otto Leistiko, Jr. was born in Omaha, Nebraska in 1931. He served with the U. S. Navy Air Force from 1950 to 1954. He received a B.S. degree (college unknown). From circa 1960 to 1966 he worked on diffusion and design of FET devices in the physics section of Fairchild R&D. He collaborated with C. T. Sah and Andy Grove as co-inventor of U.S. patent 3463977 (below). Circa 1966 he joined Hewlett Packard but his signature appears in the notebook Forsythe (551) with a 1971 date. He was later associated with the Technical University of Denmark.


Fairchild Semiconductor

Identifying Numbers

Document number 110


Approximately 24 dated entries over 45 pages.


12 x 10 inches


Describes several experiments on the out-diffusion of aluminum in FET devices. Proposes mask geometry designs for a “pentode replacement” and other FET devices. [Note: A copy of “Project plan for project #189, field effect transistors” prepared by the author in mid-1961 is inserted into page 88 of Moore LN#2.] Notes an experiment to study “the drift problem of the SCT” – C.T. Sah’s surface controlled transistor. (p. 34). This is one of the earliest Fairchild references to the instability issues that would plague MOS devices for the rest of decade. A pasted-in typed page of the draft of TR 236 (below) (p. 39).


The author is named as inventor on 3 U.S patents. All 3 patents are assigned to Fairchild:

U.S. patent 3335342, “Field-effect transistors.” Filed 1962-06-11. Issued 1967-08-08.

U.S. patent 318312, “Method of making field-effect transistors.” Filed 1962-06-11. Issued 1965-05-11.

U.S. patent 3463977, “Optimized double-ring semiconductor device.” Filed 1966-04-21. Issued 1969-08-26.



Collection Title

Fairchild Semiconductor notebooks and technical papers


The author contributed to the following R&D Technical Reports (TR) and papers in professional publications during his service at Fairchild:

TR14 A lateral field photocell (1960-01-20).

TR155 Diffusion of gallium through a silicon dioxide layer (1964-02-14).

TR166 Redistribution of acceptor and donor impurities during thermal oxidation of silicon (1964-03-25).

TR236 Breakdown voltage of planar silicon diodes (1965-12-07).

TR257 Effect of surface fields on the breakdown voltage of planar silicon P-N junctions (1966-07-22) .

Grove, A.S., Leistiko, O. Jr. and Hooper, W.W. Effect of surface fields on the breakdown voltage of planar silicon p-n junctions, IEEE Transactions on Electron Devices, vol. 14, iss. 3 (1967): 157-162.

Lauritzen, P. and Leistiko, O., Jr. Field-effect transistors as low-noise amplifiers. 1962 IEEE International Solid-State Circuits Conference: Digest of Technical Papers, vol. V (1962): 62-62.

Leistiko, O., Jr., Grove, A.S. and Sah, C.T. Electron and hole mobilities in inversion layers on thermally oxidized silicon surfaces. IEEE Transactions on Electron Devices, vol. 12, iss. 5 (1965): 248-254.


Gift of Texas Instruments Incorporated

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