TitleLenzlinger patent notebook (#764)
Biographical NotesMartin Lenzlinger joined Fairchild circa 1967. A 1968 organization chart indicates that he was a Member of Technical Staff reporting to E. Snow in the Surface Physics section of Physics Department.
ExtentApproximately 28 dated entries over 75 pages.
Dimensions12 x 10 inches
DescriptionThis volume describes experiments on the breakdown of silicon oxide (pp. 1- 6); study of weak-spots in MOS capacitors (pp. 7-15); feasibility of cold cathode structure (p. 43); and an idea for an MNOS Random Access or Read Mostly Memory (pp. 71-75).
PatentsThe author is named as inventor on 1 U.S patent. It is assigned to Fairchild:
U.S. patent 3648127, “Reach through or punch-through for gate protection in MOS devices.” Filed 1970-09-28. Issued 1972.
Collection TitleFairchild Semiconductor notebooks and technical papers
PublicationsThe author contributed to the following R&D Technical Reports (TR) and papers in professional publications during his service at Fairchild:
TR360 Fowler-Nordheim tunneling into thermally grown SiO2 (1968-09-09).
TR387 Charge transport and storage in metal nitride-oxide-silicon (MNOS) structures (1969-02-12).
TR406 Hall effect in silicon-chromium films (1969-05-16).
TR456 Gate protection of MIS devices (1970-01-26).
TR496 Charge transfer in charge coupled devices (1971-02-22).
Bentchkowsky, D.F. and Lenzlinger, M. Charge transport and storage in metal-nitride-oxide-silicon (MNOS) structures. Journal of Applied Physics, vol. 40, iss. 8 (1969): 3307-3319.
Kim, C. and Lenzlinger, M. Charge transfer in charge-coupled devices. Journal of Applied Physics, vol. 42, iss. 9 (1971): 3586-3594.
*Lenzlinger, M. Gate protection of MIS devices. IEEE Transactions on Electron Devices, vol. 18, iss. 4 (1971): 249-257.
*Lenzlinger, M. and Keefe, G.O. Hall effect in silicon-chromium films. Journal of Applied Physics, vol. 40, iss. 12 (1969): 4913-4919.
*Lenzlinger, M., Keefe, G.O. and Waits, R.K. Hall effect in silicon–chromium films. Journal of Vacuum Science and Technology. vol. 6, iss. 4 (1969): 701.
Lenzlinger, M. and Snow, E.H. Fowler-Nordheim tunneling into thermally grown SiO2. Journal of Applied Physics, vol. 40, iss. 1 (1969): 278-283.
*He was lead author on these papers. Reprints are included in a three volume, bound set of “Fairchild Research Published Technical Papers” edited by Bruce Deal in 1988. Copy in the CHM collection