Artifact Details

Title

Parker patent notebook (#757)

Catalog Number

102723004

Type

Text

Date

1967-09-12

Author

Parker, Gerry (Gerhard) H.

Biographical Notes

Gerhard (Gerry) H. Parker was born in 1943. He received B.S. (1965), M.S. (1966) and Ph.D. (1970) degrees in electrical engineering from the California Institute of Technology. He joined Fairchild circa 1967 where he studied MOS surface effects. He joined Intel in 1969 and served for more than 30 years in the areas of technology development, operations and new business development, including as Senior Vice President of Technology and Manufacturing Group from 1989 to 1999 and General Manager of Intel's New Business Group from 1999 to 2001. He has been a Director of Lattice Semiconductor Corporation, Applied Materials Inc., FEI Co. and a Trustee of the UC Davis Foundation.

Publisher

Fairchild Semiconductor

Identifying Numbers

Document number 757

Extent

1 dated entry over 2 pages.

Dimensions

12 x 10 inches

Description

Describes work on the high-frequency performance of a surface field-effect structure together with a cross section diagram and equivalent circuit schematics.

Category

Notebooks

Collection Title

Fairchild Semiconductor notebooks and technical papers

Publications

The author contributed to the following conference paper during his service at Fairchild:

Parker, G.H. and Mead, C.A. The effect of trapping states on tunneling in metal-semiconductor junctions. Applied Physics Letters, vol. 14, iss. 1 (1969): 21-23.

Credit

Gift of Texas Instruments Incorporated

Lot Number

X6464.2012