TitleParker patent notebook (#757)
AuthorParker, Gerry (Gerhard) H.
Biographical NotesGerhard (Gerry) H. Parker was born in 1943. He received B.S. (1965), M.S. (1966) and Ph.D. (1970) degrees in electrical engineering from the California Institute of Technology. He joined Fairchild circa 1967 where he studied MOS surface effects. He joined Intel in 1969 and served for more than 30 years in the areas of technology development, operations and new business development, including as Senior Vice President of Technology and Manufacturing Group from 1989 to 1999 and General Manager of Intel's New Business Group from 1999 to 2001. He has been a Director of Lattice Semiconductor Corporation, Applied Materials Inc., FEI Co. and a Trustee of the UC Davis Foundation.
Extent1 dated entry over 2 pages.
Dimensions12 x 10 inches
DescriptionDescribes work on the high-frequency performance of a surface field-effect structure together with a cross section diagram and equivalent circuit schematics.
Collection TitleFairchild Semiconductor notebooks and technical papers
PublicationsThe author contributed to the following conference paper during his service at Fairchild:
Parker, G.H. and Mead, C.A. The effect of trapping states on tunneling in metal-semiconductor junctions. Applied Physics Letters, vol. 14, iss. 1 (1969): 21-23.