TitleShyam patent notebook (#592)
AuthorShyam, Megha (K. S. Meghashyam)
Biographical NotesMegha Shyam (also known as K. S. Meghashyam) was born in India. He attended the University College of Engineering of Osmania University, India (Electrical Engineering 1956–1960) and the Indian Institute of Science in Bangalore (Electrical Communication Engineering 1960–1961). In the U.S. he attended Harvard University (Applied Physics 1961–1963) and Stanford University (Electrical Engineering 1963–1966). He joined Fairchild circa 1966 where in 1968 he worked on compound semiconductor device technology in the New Phenomena section reporting to (later Nobel Prize winner) Herbert Kroemer. Subsequent employment included R&D Manager at Bell and Howell (1970–1972); Reliability Manager at American Microsystems Inc. (1972–1974); Member of Technical Staff at Data General (1974–1975); Reliability Manager at Synertek (1975–1977); Technical Staff at Hewlett-Packard (1977–1990); Sparcom Corporation co-founder (1990–1996); and da Vinci Technologies, Owner (1996–2002).
ExtentApproximately 9 dated entries over 152 pages.
Dimensions12 x 10 inches
DescriptionThis volume contains results of the exploration of the anisotropic properties of hot electrons in n-type germanium, particularly measurements of transverse negative mobility. It includes the design of jigs (pp.. 25 & 71) and experimental calculations. Polaroid photos display Laue crystal X-ray diffraction patterns. Waveform data is recorded the form of paper chart plots and numerous oscilloscope photos. A copy of the paper based on this work, “Transverse negative differential mobilities for hot electrons and domain formation in germanium”, published in Applied Physics Letters (1968-05-01) and co-authored with H. Kroemer is pasted on to page 114. A loose copy together with the original figure artwork is loosely inserted into the rear.
Collection TitleFairchild Semiconductor notebooks and technical papers
PublicationsThe author contributed to the following R&D Technical Reports (TR) and papers in professional publications during his service at Fairchild:
TR320 Transverse negative differential mobilities for hot electrons and domain formation in germanium (1968-01-11).
TR361 Electrical evaluation of epitaxial layers of silicon (1968-09-23).
TR420 Gunn Effect oscillator – a study in device design (1969-07-22).
TR424 Low field transport properties of electrons and holes in GaAs (1969-08-15).
TR478 Some preliminary design considerations of surface acoustic wave filters for IF amplifier applications in the frequency range 10-200 MHz (1970-07-29).
Ivanek, F., Reddi, V.G.K. and Shyam, M. Mode identification for an oscillator using solid-state active devices in a waveguide-below-cutoff resonator. Electronics Letters, vol. 6, iss. 6 (1970): 151-152.
Shyam, M. Gunn oscillations in indium arsenide C.W. operation of l.s.a. oscillators in R band. Electronics Letters, vol. 6, iss. 10 (1970): 315-317 .
Shyam, M. Transverse negative differential mobility for hot electrons and domain formation in n-type germanium. IEEE Transactions on Electron Devices, vol. 15, iss. 9 (1968): 691.
Shyam, M. and Kroemer, H. Transverse negative differential mobilities for hot electrons and domain formation in germanium. Applied Physics Letters, vol. 12, iss. 9 (1968): 283-285.