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Details

Catalog Number

102723033

Title

Sklar patent notebook (#1370)

Type

Text

Date

1971-07-01

Author

Sklar, Maija

Biographical Notes

Maija Sklar was the first female engineer to be hired by Fairchild. She worked for Bruce Deal at Raytheon Semiconductor in Mountain View and followed him to Fairchild in 1963. She handled his experimental process runs primarily focused on understanding issues related to oxidation and its role in MOS instability and surface states. A 1966 organization chart shows Sklar as an Engineer A in the Surfaces-Device Theory section led by A. Grove that reported to C. Bittmann, head of the Solid State Physics Department. This section that included B. Deal, E. Snow, and R. Whittier resolved many of the fundamental technological issues associated with stable, commercial MOS devices. Her work was an important contributor to the 1967 paper “Characteristics of the surface-state charge (Qss) of thermally oxidized silicon” with Deal, Grove and Snow that is the fifth most frequently cited paper in the history of the Electrochemical Society. She retired from Fairchild in 1986.

Publisher

Fairchild Semiconductor

Identifying Numbers

Document number 1370

Extent

No entries.

Dimensions

12 x 10 inches

Description

This book is blank.

Category

Notebooks

Collection Title

Fairchild Semiconductor notebooks and technical papers

Publications

The author contributed to the following R&D Technical Reports (TR) and papers in professional publications during her service at Fairchild:

TR147 Surface channels on silicon. II. Optimum processing procedures for fabrication of MOS (1963-12-16).

TR174 Surface channels on silicon. IV. A detailed investigation of silicon surface characteristics (1964-05-19).

TR188 Thermal oxidation of heavily-doped silicon (1964-08-28).

TR211 Variations in surface charge density of MOS structures (1965-05-05).

TR261 Characteristics of the surface-state charge of thermally oxidized silicon (1966-08-11).

TR347 Effect of cleaning and drying procedures on MOS stability (1968-06-24).

TR369 Properties of phosphovapox part III (1968-12-06).

TR370 Properties of phosphovapox part IV (1969-06-20).

TR460 Measurement and control of Qo and Qss during processing of thermally oxidized silicon devices (1970-04-07).

TR514 Si-gate processing monitoring program (1971-06-04).

Deal, B. E., Sklar, M., Grove, A. S., and Snow, E. H. Characteristics of the surface-state charge (QSS) of thermally oxidized silicon. Journal of the Electrochemical Society, vol. 114, iss. 3 (1967): 266-274.

Credit

Gift of Texas Instruments Incorporated

Lot Number

X6464.2012