Artifact Details

Title

Saxena patent notebook (#149)

Catalog Number

102723922

Type

Text

Date

1960-09-22-1962-11-07

Author

Saxena, Arjun N.

Biographical Notes

Arjun Nath Saxena was born in India and worked at the Indian Institute of Nuclear Physics. He received a Ph.D. degree in Physics from Stanford University and joined Fairchild circa 1960, initially reporting to David James, where he worked on epitaxial silicon growth techniques and later tunnel diodes. He moved to the Sprague Electric Company, located in North Adams, Massachusetts, circa 1965 and then went to RCA Labs, located in Princeton, New Jersey, both in semiconductor research roles. He retired as a professor in the Electrical, Computer, and Systems engineering Department at Rensselaer Polytechnic Institute in 1997. He served as the Consulting Editor of a book series on Microelectronics Manufacturing and has written the book “Invention of Integrated Circuits: Untold Important Facts.”

Publisher

Fairchild Semiconductor

Identifying Numbers

Document number 149

Extent

Approximately 93 dated entries over 152 pages.

Dimensions

12 x 10 inches

Description

Describes gas flow and resistance heating equipment used for epitaxial silicon growth (TR67 below); started project on Electron Tunnel-Emission Devices aka tunnel diodes (p. 41); notes on meeting with Carver Mead at Caltech (p. 43); made first tunnel diodes - SIDs (p. 52); describes ellipsometer (p. 86); report on Hot Electron Symposium at Philco (p. 95); further experiments on thin-film tunneling abandoned (p. 128) in favor of work on the “metal-base’ transistor (expected to be very high speed).

This is one of 2 books issued to the author. The other book is 254.

Patents

The author is named as inventor on 4 U.S. patents. No patents are assigned to Fairchild.

Category

Notebooks

Collection Title

Fairchild Semiconductor notebooks and technical papers

Publications

The author contributed to the following R&D Technical Reports (TR) and papers in professional publications during his service at Fairchild:

TR67 Epitaxial silicon films (1962-02-12).

TR122 Optical constants and thickness determination with an ellipsometer (1963-06-14).

TR144 Examination and evaluation of Hewlett Packard Associates hot electron diodes (1963-10-21).

TR200 Changes in the phase and amplitude of polarized light reflected from a film-covered surface and their relations with the film thickness (circa 1965).

TR221 A versatile electron microscope reflection stage and its applications (1965-01-29).

TR222 The electrical and gettering mechanism dependence on the structure of copper segregates (1965-01-29).

Saxena, A. N., Changes in the phase & amplitude of polarized light reflected from a film-covered surface. Journal of the Optical Society of America, vol. 55, no. 9 (1965-09): 1061-1067.

Saxena, A. N., Use of an ellipsometer to determine surface cleanliness and measurement of the optical and dielectric constants of InSb at λ = 5461 Å. Applied Physics Letters, vol. 7, iss. 5 (1965): 113-114.

Credit

Gift of Texas Instruments Incorporated

Lot Number

X6464.2012